Lines of TiSi, were written on Si(100) substrates by using a focused Ar+-laser. The reaction gas mixture consisted of TiCl, and H, and the substrate was used a s the silicon source. The laser deposited TiSi, lines were examined as a function of the deposition parameters. Especially the initial reactions have been studied b varying the the writing speed in a wide range. The C-54 phase of TiSi, w...

Selective epitaxial growth of InGaN alloys was performed by metalorganic chemical vapor deposition (MOCVD). Templates consisted of arrays of circular etched holes in a SiO 2 mask layer, with pre-grown GaN hexagonal pyramid structures. The room temperature (300 K) photoluminescence (PL) peak wavelength increased with increasing maskopening spacing for a constant mask-opening diameter. For 5 lm d...

We report simultaneous lateral growth of a high density of highly oriented, metal-catalyzed silicon nanowires on a patterned silicon substrate and bridging of nanowires between two vertical silicon sidewalls, which can be developed into electrodes of an electronic device. After angled deposition of catalytic metal nanoparticles on one of two opposing vertical silicon surfaces, we used a metal-c...

In order to reach high level of transistor performances, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in conduction channel is to generate strain in the structure induced by process. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhan...

The partially fluorinated oxo-alkoxide tungsten(VI) complexes WO(OR)4 [4; R = C(CH3)2CF3, 5; R = C(CH3)(CF3)2] have been synthesized as precursors for chemical vapour deposition (CVD) of WOx nanocrystalline material. Complexes 4 and 5 were prepared by salt metathesis between sodium salts of the fluoroalkoxides and WOCl4. Crystallographic structure analysis allows comparison of the bonding in 4 ...

The use of a molecular gold organometallic cluster in chemical vapour deposition is reported, and it is utilized, together with a tungsten oxide precursor, for the single-step co-deposition of (nanostructured) tungsten oxide supported gold nanoparticles (NPs). The deposited gold-NP and tungsten oxide supported gold-NP are highly active catalysts for benzyl alcohol oxidation; both show higher ac...

The use of a tantalum wire in Hot-Wire Chemical Vapour Deposition has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550oC). A transition in crystalline preferential orientation from (220) to (111) was observed around 1700oC. Transmission Electron Microscopy images, together with Secondary Ion Mass Spectrometry measurements, suggested that no oxidation oc...

In this paper we discuss results of MgB2 thin films deposition for the hot-electron bolometer (HEB) application. For this purpose a custom made hybrid physical-chemical vapour deposition (HPCVD) system was built. For films thicknesses d in the 15-45nm range the critical temperatures were from 34K to 40K. For bridges as narrow as 500nm the critical current density was >107A/cm2 indicating a high...

Aerosol-assisted chemical vapour deposition (AACVD) of Cd[(SePiPr2)2N]2 is shown to deposit cadmium selenide and/or cadmium phosphide on glass substrates, depending upon the growth conditions. The phase, structure, morphology and composition of the films were characterised by X-ray powder diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis and X-ray photoelectron s...