This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic sub...

Controlled fabrication of semiconductor nanostructures is an essential step in engineering of high performance photonic and optoelectronic devices. Diamond in particular has recently attracted considerable attention as a promising platform for quantum technologies, photonics and high resolution sensing applications. Here we demonstrate the fabrication of optically active, functional diamond str...

In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD), chemical etching and atomic layer deposition (ALD). For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions) and the etching time have a si...

Superconducting niobium cavities are important components of linear accelerators. Buffered chemical polishing (bcp) on the inner surface of the cavity is a standard procedure to improve its performance. The quality of bcp, however, has not been optimized well in terms of the uniformity of surface smoothness. A finite element computational fluid dynamics (cfd) model was developed to simulate the...

In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the 'one-pot procedure' metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced ...

The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single Crystal Silicon (SCS) for Micro-Electro/(Optical)-Mechanical-Systems (ME(O)MS). The ME(O)MS technology is very fast growing industry branch based often on the same silicon technology as integrated circuits. The process of plasma-dry etching is quite simple straightforward...

In this paper we reported the results on the low-temperature thermal oxidation of Si nanowires. Various polygon-shaped Si nanowires with linewidths between 100 and 300 nm were fabricated on Si/Si1ÿxGex=Si heterostructure substrates by using lithography, reactive ion etching, and subsequent selective chemical etching. We find that oxidized Si nanowires following 750 and 775 C wet oxidation will ...

The transport properties of single asymmetric nanopores in polyetheylene terephthalate ~PET! are examined. The pores were produced by a track etching technique based on the irradiation of the foils by swift heavy ions and subsequent chemical etching. Electrical conductivity measurements show that the nanopores in PET are cation selective and rectify the current with the preferential direction o...

Etched track opening geometries in Biotite, Phlogopite and soda-lime glass irradiated with swift heavy ions [197Au(11.64 MeV/n), 136Xe(11.56 MeV/n), 58Ni(11.56 MeV/n)] at different angle of incidence have been studied using appropriate chemical etching technique. Different geometries (Hexagonal, irregular polygon, triangular in case of Biotite and Phlogopite, and circular & elliptical in case o...

We report the effect of chemical etching of p-GaN using molten KOH:NaOH solution on leakage currents, light output power, and electrostatic discharge ESD characteristics of GaN light-emitting diodes LEDs . Photoluminescence and capacitance–voltage measurement indicated that a deep donor–acceptor pair DDAP was densely concentrated near the p-GaN surface region 18 nm and the defects were effectiv...