نتایج جستجو برای: bicmos
تعداد نتایج: 644 فیلتر نتایج به سال:
We investigate the reliability issues associated with the application of CMOS devices contained within an advanced SiGe HBT BiCMOS technology to emerging cryogenic space electronics (e.g., down to 43 K, for Lunar missions). Reduced temperature operation improves CMOS device performance (e.g., transconductance, carrier mobility, subthreshold swing, and output current drive), as expected. However...
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LNA with Current Reuse and Zero-Pole Cancellation Chunbao Ding, Wanrong Zhang, Dongyue Jin, Hongyun Xie, Pei Shen, Liang Chen, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China Abstract—A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) appli...
Although the discontinuity structures in the microstrip transmission lines such as a gap and bend have been largely studied, the three-dimensional edge effects, skin effects and metal losses have hardly been analyzed. In this paper, modeling of transmission line with bend and gap discontinuity with equation based process technology independent method are developed. The effect of the signal laye...
Forty years ago Gene Amdahl published a figure of merit for parallel computation, which proved extremely controversial. The controversy still rages today, although those that have looked closely at this figure of merit conclude that it is correct, but perhaps misinterpreted. In this paper we will look at a small variation on that law that suggests computer designers should take a closer look at...
The design of an on-chip RC-based oscillator, implemented in a standard 0:35mm BiCMOS process, without any external component, is presented. The proposed oscillator provides a clock signal at a frequency of 50 kHz with a temperature coefficient smaller than 0:3%=C over a temperature range from 0 to 80 !C, without any external trimming. The proposed oscillator operates with a supply voltage of 0...
To my family and friends. iii ACKNOWLEDGEMENTS This research work that I commenced four years ago would not have culminated into this dissertation without the help and constant support of many people. I am grateful to my advisor, Professor John D. Cressler, for providing me with this wonderful and exciting opportunity. His deep love and enthusiasm for research and his passion for life is very i...
The demand for higher data rates in communication networks raises the need for test equipment operating above 40Gb/s. PRBS generators are commonly used to provide test patterns for highspeed blocks such as MUX or CDR circuits. While generators with pattern lengths of 2-1 have been reported at rates of 100 Gb/s [1], a 2-1 pattern is required for testing CDRs to ensure that phase lock is maintain...
A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18μm SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB singleended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S11<-15dB at 50-94GHz and 14dB gain at 65GHz, a double-ba...
Scalable models for both active and passive components are essential for the design of highly integrated fiber−optic physical layer ICs. This paper focuses on the various technology options available for 10 Gb/s and 40 Gb/s applications, on how their constituent components are modeled and what the characteristics and requirements are for the basic building blocks. As part of the technology comp...
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