In this work the impedance of separate-absorption-charge-multiplication Ge/Si avalanche photodiodes (APD) is characterized over a large range of bias voltage. An equivalent circuit with an inductive element is presented for modeling the Ge/Si APD. All the parameters for the elements included in the equivalent circuit are extracted by fitting the measured S(22) with the genetic algorithm optimiz...

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...

Ag thin films with a nominal thickness of 80 nm were vacuum evaporated onto a Si substrate. The thin Ag2S layers were grown by depositing sulfur onto the Ag surfaces in a clean environment. First, analytic grade sulfur powder was loaded in a quartz tube, melted and cooled back in order to ensure a homogenous source. The thin film sample was then loaded in the tube to a distance of 2 cm from the...

Articles you may be interested in Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Appl. Lifetime-limited current in Cu-gate metal-oxide-semiconductor capacitors subjected to bias thermal stress M...

This paper, presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output v...

This paper introduce a new current mode Schmitt trigger circuit using a single Current Controlled Differential Difference Current Conveyor Transconductance Amplifier (CCDDCCTA). The circuit is designed using a single CCDDCCTA without any passive component. The proposed Schmitt trigger circuit is designed at a supply voltage of ±1.25V, bias voltage of -0.8V using PSPICE and the model parameter o...

This electric field arises -even in the absence of any external applied voltage -from a concentration gradient of donor and acceptor atoms at the interface between P-type and N-type material, and results in the well-known built-in junction voltage (~0.6V) which is typical of silicon diodes. In some applications, an additional, external back-bias may be utilized to augment this built-in voltage.

MOSFET’S subjected to large-signal gate+ource voltage pulses on microsecond to millisecond time scales exhibit transient threshold voltage shifts which relax over considerably longer periods of time. This problem is important in highaccuracy analog circuits where it can cause errors at the 12 b level and above. In thk paper, transient threshold voltage shifts are characterized with respect to t...

Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostructure may differ greatly. In this work, the bulk and surface local charge carrier transport prop...