نتایج جستجو برای: barrier height

تعداد نتایج: 188665  

2015
Yang Jiao Anders Hellman Yurui Fang Shiwu Gao Mikael Käll

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a pro...

Journal: : 2021

We obtained an analytical expression for the average motion velocity of adiabatic Brownian motor (ratchet), which operates due to small dichotomous spatially harmonic fluctuations a stepwise potential. The symmetry properties as functional stationary and fluctuating components nanoparticle potential energy are revealed, ranges values system parameters that ensure rightward leftward determined. ...

شاکری, بنین , پیامی, محمود ,

  In this work, using the liquid drop model in the context of the stabilized jellium model, we have studied the fission of charged Na clusters. In this study we have assumed a deformed non-spherical shape for the cluster. The ground state energies, critical sizes, fission barrier height, and the evaporation energies have been calculated. The results show a better agreement to the experimental r...

Journal: :The Journal of chemical physics 2005
Michael T Feldmann Susanna L Widicus Geoffrey A Blake David R Kent William A Goddard

The mechanism for the formation of hexamethylenetetraamine predicts the formation of aminomethanol from the addition of ammonia to formaldehyde. This molecule subsequently undergoes unimolecular decomposition to form methanimine and water. Aminomethanol is the predicted precursor to interstellar glycine, and is therefore of great interest for laboratory spectroscopic study, which would serve as...

1999
Pedro Salvador Miquel Duran

The relevance of the fragment relaxation energy term and the effect of the basis set superposition error on the geometry of the BF3 ̄NH3 and C2H4 ̄SO2 van der Waals dimers have been analyzed. Second-order Mo”ller–Plesset perturbation theory calculations with the d95(d ,p) basis set have been used to calculate the counterpoise-corrected barrier height for the internal rotations. These barriers hav...

Journal: :Nanoscale 2011
Nandan Singh Chaoyi Yan Pooi See Lee Elisabetta Comini

The role of contact between semiconducting nanowire and metal electrodes in a single nanowire field effect transistor (NW-FET) is investigated for the sensing of different type of gases. Two different types of In(2)O(3) nanowire devices, namely; Schottky contact device (SCD) and Ohmic contact device (OCD) are evaluated. SCD has shown a superior response to the reducing gas (CO) compared to oxid...

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