The scanning tunneling microscope is used to study arsenic-related point defects in low-temperaturegrown GaAs. Tunneling spectroscopy reveals a band of donor states located near E„+0. 5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 A from the core. The structure of the defect is found to be consistent with that of an isolate...

In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron–hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy...

A plate periodically bonded with piezoelectric patches on its surfaces is considered. The differential quadrature element method is used to solve the wave motion equation for the two-dimensional periodic structure. The method is very simple and easy to implement. Based on the method, band structures for in-plane wave propagating in the periodic piezoelectric plate are studied, from which the fr...

We consider propagation of coupled waves (polaritons) formed by a scalar electromagnetic wave and excitations of a finite one dimensional chain of dipoles. It is shown that a microscopic defect (an impurity dipole) embedded in the chain causes resonance tunneling of the electromagnetic wave with the frequency within the forbidden band between two polariton branches. We demonstrate that resonanc...

Band-notch characteristic has been of great interest recently to overcome the electromagnetic interference of Ultra-wideband systems (UWB) with other existing ones. In this paper, we present a novel microstrip-fed antenna with band rejection property appropriate for UWB applications. Band-notch characteristic has been achieved by adding a rectangular resonant element to the ground section. A pr...

We report an experimental study of the electrical properties of single-barrier Hg 1 _ x Cdx Te heterostructures grown by molecular-beam epitaxy. At high temperature, the measured current is interpreted to be the sum of thermionic and tunneling hole currents. This analysis is applied to data from each of three samples, yielding values of the HgTe-CdTe valence-band discontinuity between 290 ± 50 ...