Cold spray (CS) is a form of additive manufacturing process, involving the accumulation ductile metal micro particles to create new surface coatings or free-standing structures. Metallic are accelerated through gas stream, experience high-strain-rate microscopic ballistic collisions against target substrate. It yields tremendous amounts kinetic energy from extreme plastic deformation and In thi...

Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni80Fe20 /Cu/Co trilayer films in the presence of ...

This technical report contains the text of Nahmsuk Oh’s thesis “Software Implemented Hardware Fault Tolerance.” FUNDING This work was supported in part by the Ballistic Missile Defense Organization, Innovative Science and Technology (BMDO/IST) Directorate and administered through the Department of the Navy, Office of Naval Research under Grant Nos. N00014-92-J-1782 and N00014-95-1-1047 Copyrigh...

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have bee...

We present an analytical model for nanoscale MOSFETs capable to describe the transition from drift-diffusion to ballistic transport. We start from a closed-form model of ballistic Fully Depleted SOI (FDSOI) and Double Gate (DG) MOSFETs with non degenerate statistics, and, on the basis of the Büttiker interpretation of dissipative transport in terms of virtual voltage probes, we show that a long...

In this paper, we examine the crossover between 4 ballistic and diffusive transport in III–V nanowire transistors. 5 We find that at lower drain voltages the ballistic-to-diffusive 6 crossover occurs at channel lengths of approximately 2.3 nm at 7 room temperature. However, when we increase the drain voltage, 8 we find that the ballistic-to-diffusive crossover can be more than 9 nine times as l...

It is well known that yaw can affect the penetrative power of armour piercing rounds. To investigate this effect purely experimentally is difficult because the typical ballistic set up does not allow control over the yaw angle of the projectile. In this study, a numerical model is used complementing ballistic experiments for a range of yaw angles. For the projectile, a validated computer model ...

The diffusive-ballistic heat conduction of finite-length single-walled carbon nanotubes has been studied by means of nonequilibrium molecular dynamics simulations. The length dependence of thermal conductivity [1] is quantified for a range of nanotube lengths up to 1.6 μm at room temperature. A gradual transition from nearly pure ballistic to diffusive-ballistic heat conduction was identified f...