نتایج جستجو برای: annealing in vacuum

تعداد نتایج: 16993521  

2000
A. D. Dinsmore D. S. Hsu S. B. Qadri J. O. Cross T. A. Kennedy H. F. Gray B. R. Ratna

Structural and light-emitting properties of nanoparticles of ZnS:Mn annealed in vacuum at temperatures up to 525 °C are presented. Annealing the 3.5 nm particles at temperatures up to 350 °C caused growth of some particles without substantial change in the luminescence or ZnS lattice. After annealing at 400–525 °C, the high-temperature wurtzite phase of ZnS appeared, accompanied by an increase ...

2012
Sonia Ben Slama Messaoud Hajji Hatem Ezzaouia

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under va...

Journal: :Manufacturing Technology 2023

FeCoCrNiZr high-entropy alloy was melted by vacuum arc melting. The alloys were annealed at 873, 1073, and 1273K, respectively. microstructure, compressive mechanical properties, thermal stability, hardness of as-cast different annealing temperatures investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), microhardness tester universal material testing machine. result...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2011
S Gevers T Weisemoeller D Bruns A Giussani T Schroeder J Wollschläger

Thin heteroepitaxial praseodymia films with fluorite structure on Si(111) were annealed under ultra-high vacuum conditions at temperatures in the region of 100 up to 300 °C. Afterward investigations by x-ray diffraction, grazing incidence x-ray diffraction and x-ray reflectometry were performed to obtain information about structural changes of the film during the annealing process. For this rea...

   High transparent conductive indium tin oxide/titanium dioxide (ITO/TiO2) nanostructured thin film is prepared by sol-gel dip-coating technique. This method yielded monodisperse ITO nanoparticles with mean diameter of 12 nm. The atomic composition of the Sn within the ITO structure changed from 0-20 wt.%. Through controlled annealing temperature at 550 oC, the result...

Journal: : 2022

Using a pulsed electron beam evaporation in vacuum mesoporous nanopowder CaF 2 with specific surface area up to 60.5 m /g were produced. The effect of annealing different media on the evolution magnetic and texture properties nanoparticles has been studied. For first time, medium magnetization nanopowders was discovered. Keywords: nanopowders, calcium fluoride, ferromagnetism, evaporation.

Journal: :Fizika i tehnika poluprovodnikov 2023

In this work, the process of oxide removal from InSb (001) surface was studied in-situ by high-energy electron diffraction in vacuum and under an antimony flux. The dependence thickness on annealing temperature obtained. It has been found that flux slows down due to formation reaction. described a system kinetic equations, activation energy decomposition determined.

2014
Stephen P Stagon Hanchen Huang

This letter proposes and experimentally demonstrates that oxygen, through action as a surfactant, enables the growth of aluminum nanorods using physical vapor deposition. Based on the mechanism through which oxygen acts, the authors show that the diameter of aluminum nanorods can be controlled from 50 to 500 nm by varying the amount of oxygen present, through modulating the vacuum level, and by...

2001
E. J. Preisler O. J. Marsh T. C. McGill T. J. Watson

The silicon–cerium oxide interface is studied using x-ray photoelectron spectroscopy. The oxidation and reduction of species at the interface are examined as a function of annealing temperature both in vacuum and oxygen ambient, in order to determine their relative stabilities. By depositing a very thin CeO2 film ~;30 Å!, the cerium and silicon core level peaks can be monitored simultaneously. ...

2017
Marietta Seifert Gayatri K. Rane Steffen Oswald Siegfried B. Menzel Thomas Gemming

RuAl thin films possess a high potential as a high temperature stable metallization for surface acoustic wave devices. During the annealing process of the Ru-Al films, Al 2 O 3 is formed at the surface of the films even under high vacuum conditions, so that the composition of a deposited Ru 50 Al 50 film is shifted to a Ru-rich alloy. To compensate for this effect, the Al content is systematica...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید