The structural analysis of GaN and Al x Ga1-x N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al x Ga1-x N on GaN. Moreover, the doping with Mn promotes the formation of layered Al x Ga1-x N/GaN superlattice-lik...

A further child with giant axonal neuropathy (GAN), abnormally curly hair and consanguineous parents is described. Of the 19 patients with GAN so far reported in the literature, six, including the present patient, have resulted from consanguineous marriages. This makes autosomal recessive inheritance of GAN highly probable. Our patient also exhibited cerebellar ataxia and signs of pyramidal tra...

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...

Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals a...

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. ...

Strong photoluminescence and radiative recombination lifetimes longer than 1 ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands. The flat islands, with a width at their base in the order of 200 nm and a height in the order of 1—2 nm, grow in a spiral mode around dislocations with partial or pure screw character after a passivation of the ...

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electronmobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standar...

The growth of Eu-doped GaN (GaN:Eu) films has been performed on GaAs (100) substrates using RF magnetron sputtering method. The GaN layers exhibit a wurtzite structure. Substrate temperature and the pressure during the deposition do not influence the orientation of GaN:Eu films. After annealing of GaN films in NH3, a strong red luminescence at 622 nm due to Eu ions has been observed.

This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical ...

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