Individual large-diameter ~;3 to 5 nm! semiconducting single-walled carbon nanotubes ~SWNTs! are found to exhibit ambipolar field-effect transistor ~FET! behavior, with easily accessible nand p-conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs ...

We present the results of a 2-D, two fluid (ions and neutrals) simulation of the ambipolar filamentation process, in which a magnetized, weakly ionized plasma is stirred by turbulence in the ambipolar frequency range. The higher turbulent velocity of the neutrals in the most ionized regions gives rise to a non-linear force driving them out of these regions, so that the initial ionization inhomo...

The fascinating characteristic of organic light-emitting transistors (OLETs) being electrical switches with an intrinsic capability makes them attractive candidates for a wide variety applications, ranging from sensors to displays. To date, the OLET ambipolar trilayer heterostructure is most developed architecture maximizing device performance. However, major challenge OLETs remains inverse cor...

Simple trifunctional Ir(III) ppy-type asymmetric phosphorescent emitters with ambipolar character are reported, which afford highly efficient OLEDs.

The regular Einstein relation, connecting the coefficient of ambipolar diffusion and the Dember field with mobilities, is generalized for the case of an interacting electron-hole plasma. The calculations are presented for a nondegenerate plasma injected by light into semiconductors of silicon and germanium type. The Debye-Huckel correlation and the Wigner-Seitz exchange terms are considered. Co...

The ambipolar diffusion length is measured in strained &Gal-&/InP quantum wells for several mole fractions in the interval 0.3 <X <0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with result...

We spatially resolve the infrared light emission from ambipolar carbon-nanotube field-effect transistors with long-channel lengths. Electrons and holes are injected from opposite contacts into a single nanotube molecule. The ambipolar domain, where electron and hole currents overlap, forms a microscopic light emitter within the carbon nanotube. We can control its location by varying gate and dr...

The absorption recovery of a photoexcited InGaP epitaxial film 0.4 pm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption re...

Density functional theory calculations were carried out to investigate the electronic structures of representative ambipolar hosts for blue electroluminescence, based on two carbazole end groups and meta-terphenyl (mTP)-like bridges. The bridge molecular segments include mTP, 2,6-bisphenylpyridine, 3,5-bisphenylpyridine, and 2,6-bisphenylpyrimidine. While the ionization potentials and electron ...