The effects of sputtered SiN on current collapse of AlGaN/GaN HEMTs have been studied. The current collapse in terms of dynamic on-state resistance was reduced with increasing SiN deposition and post annealing temperatures due to the reduction of SiN/AlGaN interface trap density. These results indicate that sputtered SiN with deposition temperature at 250 °C is a promising candidate for passiva...

Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessedgate devices with SiO2 dielectrics are observed to exhibit simultaneous trappi...

A large–signal model of AlGaN/GaN HEMTs grown on sapphire substrate with gate width Wg = 2 × 150 μm and gate length Lg = 250 nm is presented. The equivalent circuit model accurately describes the sub–threshold region and takes into account the self–heating effects. The thermal resistance has been calculated analytically. The DC, small–signal and large– signal behaviour are accurately described ...

The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical ...

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance both the driver-gate drain-source loops. Modules prepared using methods double-pulse test was evaluate compare their switc...

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field ...

Several novel high-performance GaN-based devices have been recently proposed. InAlN/GaN high electron mobility transistors (HEMTs) provide higher polarization charges without the drawback of high strain and demonstrate maximum current capabilities surpassing those of AlGaN/GaN structures [1]. We shall discuss the models of the material system [2], implemented in our twodimensional device simula...