KUANG, WEIWEI. TCAD Simulation and Modeling of AlGaN/GaN HFETs. (Under the direction of Dr. Robert J. Trew and Dr. Griff L. Bilbro). This work focused on the TCAD simulation and modeling of AlGaN/GaN HFETs. AlGaN/GaN HFETs have demonstrated excellent RF performance, which benefits from the high sheet charge density in these hetero-structures, the high carrier mobility and saturation velocity in...

In this work we use density functional theory based on the ultra-soft pseudo-potential to calculate thestructural, mechanical and thermal properties of narrow single walled BN, AlN and GaN nanotubes.The electron-electron interactions were expressed within the local density approximation (LDA). Wehave also obtained the Phonon dispersion and elastic constants of these nanotubes using the densityf...

Articles you may be interested in Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer Appl. Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates J. Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting d...

The structural analysis of GaN and Al x Ga1-x N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al x Ga1-x N on GaN. Moreover, the doping with Mn promotes the formation of layered Al x Ga1-x N/GaN superlattice-lik...

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A further child with giant axonal neuropathy (GAN), abnormally curly hair and consanguineous parents is described. Of the 19 patients with GAN so far reported in the literature, six, including the present patient, have resulted from consanguineous marriages. This makes autosomal recessive inheritance of GAN highly probable. Our patient also exhibited cerebellar ataxia and signs of pyramidal tra...

Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals a...

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. ...

Strong photoluminescence and radiative recombination lifetimes longer than 1 ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands. The flat islands, with a width at their base in the order of 200 nm and a height in the order of 1—2 nm, grow in a spiral mode around dislocations with partial or pure screw character after a passivation of the ...

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electronmobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standar...