We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

Alumina-rich iron ore is a widely existed polymetallic deposit in the nature, and it has a high comprehensive utilization value. Because the alumina and iron contents of alumina-rich iron ore vary from each other, there are many different measures and processes to recover iron and alumina from the various kinds of alumina-rich iron ore. In the blast furnace (BF) ironmaking process, the alumina ...

this paper reports results of a study regarding the activities of nano structure mn/γ-al2o3 and γ-al2o3 catalysts for oxidation of 2-propanol (as a model of volatile organic compound). nanostructure of catalysts was revealed using xrd, sem and tem techniques. catalytic studies were carried out in u-shaped packed bed reactor under atmospheric pressure and at the reaction temperature of 150- 500°...

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

Transition aluminas form a basis of important catalytic and catalytic support materials due to their unique surface acidity, high temperature structural stability, and their viability for synthesis as high surface area materials [1]. The origin of transition aluminas attractive properties has been extensively studied in the past 50+ years, but despite this effort, there are number of structural...

The properties of CaCu3.1Ti4O12.1 [CC3.1TO] ceramics with the addition of Al2O3 nanoparticles, prepared via a solid-state reaction technique, were investigated. The nanoparticle additive was found to inhibit grain growth with the average grain size decreasing from approximately 7.5 μm for CC3.1TO to approximately 2.0 μm for the unmodified samples, while the Knoop hardness value was found to imp...

Investigation of the properties of Al2O3-on-GaN metal-oxide-semiconductor diodes is reported. A new method is shown to calculate the metal-oxide barrier height based on the onset of the FowlerNordheim tunnelling current regime in direct bias. The Ni/Al2O3 barrier was extracted, for the first time with this method, and it was found to match other reports in the literature. The dependence of the ...

Multilayered hard coatings with a CrN matrix and an Al2O3, TiO2, or nanolaminate-Al2O3/TiO2 sealing layer were designed by a hybrid deposition process combined with physical vapor deposition (PVD) and atomic layer deposition (ALD). The strategy was to utilize ALD thin films as pinhole-free barriers to seal the intrinsic defects to protect the CrN matrix. The influences of the different sealing ...

This report mainly focuses on the investigation of morphological, optical, and electrical properties of Al2O3/ZnO nanolaminates regulated by varying bilayer thicknesses. The growth mechanism of nanolaminates based on atomic layer deposition and Al penetration into ZnO layer are proposed. The surface roughness of Al2O3/ZnO nanolaminates can be controlled due to the smooth effect of interposed Al...