Monoclinic HfO2 nanoparticles were doped with nitrogen via hydrothermal treatment that avoided high-cost pyrolysis with NH3 gas in order to develop a novel oxygen reduction reaction catalyst for use in acidic media. Catalyst size reduction was achieved using a reduced graphene oxide support, and activity above 0.8 V was obtained.

The Minnesota Nano Center’s Keller Hall facility includes an atomic layer deposition (ALD) machine that is capable of depositing uniform alumina (Al2O3), hafnium oxide (HfO2), silicon dioxide (SiO2), zinc oxide (ZnO), and titanium dioxide (TiO2). ALD works by building alternate layers on a film using two different precursor gases – one usually supplying the metallic atoms and water vapor (H2O) ...

Electron trapping in ferroelectric and non-ferroelectric HfO2-based layers was studied at room temperature by charge injection photodepopulation techniques. The comparison of inferred energy distribution density trapped electrons differently processed samples shows insignificant impact Al- Si-doping on properties suggesting intrinsic nature the observed traps. A to HfZrO4 is provided. volume co...

Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in the field of semiconductor integrated circuits. For HfO2, several crystal structures are possible, with different properties which can be difficult to describe detail from an experimental point view. In this study, detailed computational approach has been shown present complete analysis four HfO2 ...

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed storage, and low energy consumption fulfill rapid developments of big data, Internet Things, artificial intelligence. Hafnia (HfO2)-based materials have attracted significant interest advantages complementary-metal–oxide–semiconductor (CMOS) compatibility, large coercive voltage, superior ferroelectricit...

Fabricating a dense and crystalline SnO2 film has been an important step for efficient SnO2-based perovskite solar cells (PSCs). Herein, wide bandgap material, HfO2, was deposited on the surface of FTO to facilitate formation film. It found that HfO2 modification could significantly improve crystallization upper passivate trap states within layer. Moreover, high conduction band level can block ...