AlGaN/GaN high-electron-mobility transistors (HEMT) have been grown by radio frequency molecular beam epitaxy (RF-MBE) on 3” Si substrates. A record low contact resistance Rc ~ 0.11 .mm has been achieved for GaN HEMTs on Si by using non alloyed ohmic contacts regrown by MBE. Owing to the low contact resistance a 75-nm gate length unpassivated HEMT shows intrinsic current gain cut-off frequency ...

We present a fabrication technique and molecular beam epitaxy MBE regrowth of first-order, high contrast AlGaAs/GaAs diffraction gratings for laser emitting at 980 nm. An immersion holography technique is used to uniformly pattern first-order gratings with a pitch of 155 nm. MBE is used to overgrow Al0.75Ga0.25As on etched GaAs gratings. It is found that slow growth rates with optimum arsenic o...

We evaluate and compare two common methods, artificial neural networks (ANN) and support vector regression (SVR), for predicting energy productions from a solar photovoltaic (PV) system in Florida 15 min, 1 h and 24 h ahead of time. A hierarchical approach is proposed based on the machine learning algorithms tested. The production data used in this work corresponds to 15 min averaged power meas...

We report grazing incidence X-ray scattering and high angle X-ray diffraction measurements of the structure of sputtered Cu/Co multilayers. Compared with structures grown by molecular beam epitaxy (MBE) the roughness at the Cu/Co interfaces has little conformality and is almost uncorrelated between the bottom and the top. The lateral correlation length is short in comparison with the MBE materi...

Resumo A medicina baseada em evidências (MBE) pretende aumentar a eficiência e qualidade dos serviços de saúde prestados à população diminuir os custos operacionais processos prevenção, tratamento reabilitação. Busca identificar problemas relevantes do paciente promover aplicabilidade social das conclusões. O artigo ressalta importância da MBE para o ensino as práticas clínicas sociais atualida...

Abstract The reflection high-energy electron diffraction (RHEED) method is widely used for the in situ observation of molecular beam epitaxy (MBE). This because RHEED pattern dynamically changes according to growth conditions, such as surface temperature and material supply. However, date, has been categorized recognized based on experience researcher. In this study, we investigated classificat...

Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of carbon doping on solid-phase epitaxial regrowth �SPER� of strained 2000 Å, Si0.88Ge0.12Si alloy layers grown by molecular-beam epitaxy �MBE�. Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures �500...

The numerical simulation of the dynamics of the molecular beam epitaxy (MBE) growth is considered in this article. The governing equation is a nonlinear evolutionary equation that is of linear fourth order derivative term and nonlinear second order derivative term in space. The main purpose of this work is to construct and analyze two linearized finite difference schemes for solving the MBE mod...