نتایج جستجو برای: y2o3 dopant
تعداد نتایج: 5523 فیلتر نتایج به سال:
Irreversible optical sensing of humidity by a doped cholesteric liquid crystal is achieved by using a thin film of nematic host E7 with a binaphthylorthosilicate ester as dopant (guest). The film changes its color from blue (to green to orange to red) to colorless when exposed to humidity as the dopant is hydrolyzed.
Both Fe3 + and Fe2 + ions occur in FeCl3-doped polyacetylene. At low dopant levels ( < 0.01 mole frac tion) both Fe2 + and Fe3 + io'ns are paramagnetic down to 4.2 K. At dopant levels > 0.01 mole fraction, there is evidence from Mossbauer spectroscopy that Fe2+ ions associate into aggregates which are magneti cally ordered below 25 K. Aggregate formation appears to correlate with high electri...
It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the char...
We report on an extensive spectroscopic investigation of the impact of substitutional doping on the optoelectronic properties of PbS colloidal quantum dot (CQD) solids. N-doping is provided by Bi incorporation during CQD synthesis as well as post-synthetically via cation exchange reactions. The spectroscopic data indicate a systematic quenching of the excitonic absorption and luminescence and t...
We have investigated hall effect on YBa2Cu3-xMxO7-δ (M=Ni, Fe) bulk samples, with dopant amount 0 ≤ x ≤ 0.045 for Ni and 0 ≤ x ≤ 0.03 for Fe, with magnetic field (H=2.52, 4.61, 6.27 kOe) perpendicular to sample’s surface with constant current 100 mA. Our study shows that as both dopants increases, TC decreases and it decreases faster by Ni . In these ranges of dopant and magnetic field the Hall...
The controlled introduction of dopant atoms to semiconducting host materials is the corner stone of electronic device fabrication. Dopant atoms provide a means to modulate the electronic, optical, and magnetic properties of semiconductors [1], and it is now possible to control dopant profiles with true atomic-scale precision in the laboratory [2]. Moreover, industrial fabrication methods are no...
Bimetallic metal-organic frameworks are rationally synthesized as templates and employed for porous carbons with retained morphology, high graphitization degree, hierarchical porosity, high surface area, CoNx moiety and uniform N/Co dopant by pyrolysis. The optimized carbon with additional phosphorus dopant exhibits excellent electrocatalytic performance for the oxygen reduction reaction, which...
To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.
The fluorination of Yttria (Y2O3) coatings in the inner chamber wall a plasma-etching equipment causes process drift. In this paper, we investigate relationship between microstructure and fluoride layer Y2O3 prepared by aerosol deposition (AD) method compared with atmospheric plasma spraying (APS) ion plating (IP). corrosion AD-coating, which has highly dense without any pores, proceeded homoge...
One of the ultimate goals in electron microscopy is 3-dimensional (3D) atomic scale information. The main challenge in obtaining 3D information in microscopy originates from the limited depth resolution. The depth resolution of scanning transmission electron microscopy (STEM) remains above ~10 nm, even with state-of the-art STEM with aberration correction [1]. Through-focal series and confocal ...
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