Abstract Tin selenide (SnSe) is considered a robust candidate for thermoelectric applications due to its very high figure of merit, ZT, with values 2.6 in p-type and 2.8 n-type single crystals. Sn has been replaced various lower group dopants achieve successful doping SnSe ZT values. A known, facile, powerful alternative way introduce hole carrier use natural vacancy, V . Through transport scan...