The performance of carbon nanotube-based transistor is analyzed. The effect of geometrical parameters on the device performance is investigated as d tunnel. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity Our results sh...

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.

We use the superposition method to model electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunneling field-effect transistor (TFET). The is formed from Ge/Si material in source/channel, respectively. modeling accomplished by considering space-charge regions at source–channel and drain–channel junctions channel region. surface potential region obtained applying pri...

In quest of new (”post-CMOS”) switches, in particular for ultra-low power application, the Tunnel Field Effect Transistor (TFET) [1] raised a lot of attention. The working principle of this device is the generation of electron-hole pairs by band-to-band tunneling (BTBT) between the valence band (VB) and the conduction band (CB). Thus, contrary to the common MOSFET, the source of current in a TF...

Submit Manuscript | http://medcraveonline.com Abbreviations: SPR: Surface plasmon resonance; ISFET: Ion Sensitive Field Effect Transistor; EnFET: Enzyme Field Effect Transistor; μTAS: Micro Total Analysis System; HCMV: Human Cytomegalovirus; ELISA: Enzyme-Linked Immunosorbent Assay; CNC: Computer Numerical Control; CAD: Computer Assisted Design; BSA: Bovine Serum Albumin; HPAb: Human Polyclonal...

In this paper, a three dimensional (3-D) analytical model of surface potential has been derived for gate engineered trapezoidal trigate Tunnel Field Effect Transistor (TFET). The obtained by assuming parabolic approximation the profile and solving 3-D Poisson equation using appropriate boundary conditions. device considered in work is silicon based TFET with composed two materials different fun...