Electron energy-loss spectroscopy (EELS) is an efficient tool for investigating the local density of optical states in single and coupled nano-systems in a transmission electron microscope (TEM) [1]. In EELS, a relativistic electron inelastically interacts with a sample, and hence loses energy by pumping the sample to a higher photonic state. The amount of energy loss of the electron is detecte...

The possibility of utilizing high-energy electron tomography to characterize the micron-scale three dimensional (3D) structures of integrated circuits has been demonstrated experimentally. First, electron transmission through a tilted SiO(2) film was measured with an ultrahigh-voltage electron microscope (ultra-HVEM) and analyzed from the point of view of elastic scattering of electrons, showin...

We report in situ observations of the growth of endotaxial CoSi(2) nanowires on Si(110) using an ultrahigh vacuum transmission electron microscope with a miniature electron-beam deposition system located above the pole-piece of the objective lens. Metal deposition at 750-850 °C results in formation of coherently strained silicide nanowires with a fixed length/width (L/W) aspect ratio that depen...

Laser-based processing enables a wide variety of device configurations comprising thin films and nanostructures on sensitive, flexible substrates that are not possible with more traditional thermal annealing schemes. In near-field optical probing, only small regions of a sample are illuminated by the laser beam at any given time. Here we report a new technique that couples the optical near-fiel...

A practical, offline method for experimental detection and correction for projector lens distortion in the transmission electron microscope (TEM) operating in high-resolution (HR) and selected area electron diffraction (SAED) modes is described. Typical TEM works show that, in the simplest case, the distortion transforms on the recording device, which would be a circle into an ellipse. The firs...

SiO2/Si(100) interfaces were for the first time observed by a spherical aberration-corrected high-resolution transmission electron microscope in a cross-sectional mode. As the Fresnel fringes were not contrasted at the interfaces, the interfacial structures were clearly observed without the need for artificial image contrast. Atomic steps and defects on the Si(100) surfaces were accurately iden...