2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in fabricating devices out of semiconductors is the need ultra-clean contacts with resistances approaching quantum limit. The lack high-quality, low-contact-resistance P-type and N-type on TMDs has limited progress towards next gener...

A kagome lattice, formed by triangles of two different directions, is known to have many emergent quantum phenomena. Under the breathing anisotropy bond strengths, this lattice can become a higher-order topological insulator (HOTI), which hosts topologically protected corner states. Experimental realizations HOTI on lattices been reported for various artificial systems, but not simple natural m...

The orbital magnetoelectric effect (OME) generically refers to the appearance of an magnetization induced by applied electric field. Here, we show that nanoribbons transition metal dichalcogenides (TMDs) with zigzag (ZZ) edges may exhibit a sizeable OME activated field along ribbons' axis. We examine extracted from monolayer (1L) and bilayer (2L) MoS$_2$ in trigonal (H) structural phase. Transv...

The transition-metal dichalcogenides (TMD) MoS₂ and WS₂ show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing strain through mechanical contacts is difficult for TMD monolayers, but state-of-the-art for TMD nanotubes. We show using density-functional theory that sim...