Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping st...

a cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. the substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. the al/ cu multilayer film was deposited on the glass substrate at the following conditions: working g...

The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of...

In this Account, we present several representative studies of thin-film growth by chemical vapor deposition, with particular emphasis given to elucidating the mechanistic, energetic, and structural aspects of nucleation and growth. These understandings have allowed us to develop new methods to deposit patterned, as opposed to blanket, thin films. We show how such procedures can be exploited to ...

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InG...

We report direct observation of a "Pac-Man" like coarsening mechanism of a self-supporting thin film of nickel oxide. The ultrathin film has an intrinsic morphological instability due to surface stress leading to the development of local thicker regions at step edges. Density functional theory calculations and continuum modeling of the elastic instability support the model for the process.

Article history: Received 11 January 2012 Received in revised form 27 March 2012 Accepted 25 April 2012 Available online 26 May 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.04.017 ⇑ Corresponding author. E-mail address: [email protected] (A. Cerdeir In this work we present a procedure for modeling the characteristics of amorphous oxide sem...

Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semicon...

Amorphous silicon (a-Si) thin film transistors (TFT’s) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT’s and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLC...