We report on the one-dimensional (1D) heteroepitaxial growth of In(x)Ga(1-x)As (x = 0.2-1) nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using metalorganic chemical vapor deposition (MOCVD) without catalysts or masks. The epitaxial growth takes place spontaneously producing uniform, nontapered, high aspect ratio NW arrays with a density exceeding 1 × 10(8)/...

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting...

Raman spectra have been investigated in PbTiO 3 thin films grown on Si by metalorganic chemical vapor deposition. A large grazing-angle scattering technique was taken to measure the temperature dependence of Raman spectra below room temperature. All Raman modes in the thin films are assigned and compared with those in the bulk single crystal, a new A 1 (TO) soft mode at 104 cm~1 was recorded wh...

Abstract Two-dimensional (2D) materials have emerged as a promising class of with unique physical and chemical properties that offer exciting prospects for various applications. Among all the synthesis methods, vapor deposition (CVD) techniques demonstrated great advantages in large-scale production 2D controlled thickness. One main challenges growth is need high temperatures crystalline substr...

In article number 2100202, Hongping Zhao and co-workers demonstrate the effective suppression of carbon incorporation in metal–organic chemical vapor deposition (MOCVD) GaN, via use CO2 laser coupling efficient decomposition ammonia. Their results provide a new route to achieve high-quality GaN epifilms with low impurity levels fast growth rates, which is promising for high-power-device applica...

A prism coupling method was used to measure the ordinary (no) and extraordinary (ne) refractive indices of AlxGa12xN films, grown by hydride vapor phase epitaxy ~HVPE! and metalorganic chemical vapor deposition ~MOCVD! on sapphire, at several discrete wavelengths from 442 nm to 1064 nm. In addition, spectroscopic transmittance and reflectance, correlated with the prism coupling results, were us...

The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured...

Wurtzite ZnO thin films with different epitaxial relationships are obtained on as-received and etched (001), (011), and (111) SrTiO3 (STO) by metal-organic chemical vapor deposition (MOCVD). ZnO films exhibit nonpolar (1120) orientation with in-plane orientation relationship of <0001>ZnO//<110>STO on as-received (001) STO, and polar c-axis growth with <1100>ZnO//<110>STO on etched (001) STO sub...