We report the switching of a bistable metal-tunnel­ oxide-silicon (MTOS) junction from a low-current state to a high­ current state by the insertion of a charge packet of minority carriers from a charge-coupied device input structure. For the 33-A tunnel oxide reported in this letter, a switching threshold of 630 pC for a 40 mils 2 device area was ~bserved. The transient switching time is al>­ ...

In this study, a two-state Markov switching count-data model is proposed as an alternative to zero-inflated models to account for the preponderance of zeros sometimes observed in transportation count data, such as the number of accidents occurring on a roadway segment over some period of time. For this accident-frequency case, zero-inflated models assume the existence of two states: one of the ...

This paper obtains upper and lower bounds for the switching activity on the state lines of a finite state machine (FSM) that is driven with typical input sequences. By exploiting the symmetries between the Hamming distances of state encodings, we obtain tight bounds on the average Hamming distance, which is proportional to the average switching activity and the overall power dissipation of the ...

A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switchin...

Novel design algorithms for exponential stability of switched linear systems using the left eigenstructure assignment approach by state feedback control are proposed in this article. For given switching constraints in the state space R, a state feedback controller for single-input switched systems is designed, based on the fact that closed loop system solutions are enforced to converge towards ...

In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of...

This paper deals with the design of piecewise linear H∞ filters for discrete-time piecewise linear systems. Both the system and filter have structures that change according to their switching rules. The system switching rule is characterized in terms of a given partition of the system state-space. The filter switching rule is also characterized in terms of a suitable filter state-space partitio...

In this note, one state transformation is used to construct switching laws for a class of switched systems totally composed of unstable subsystems. Some sufficient conditions for determining the switching law, such that the system is asymptotically stable, are derived.