Cation doping is an effective method to alter the local structure and electronic state of V2O5. While it remains a great challenge experimentally understand whether cations prefer replace V ions or reside between V2O5 layers, namely, substitutional interstitial positions. In this work, cation-doped with different elements M (M = Mn, Ni, Fe) were synthesized via hydrothermal since can uniformly ...

We study the effects of bismuth doping on crystal structure and phase transitions in single crystals perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi increases, transition assigned to cubic tetragonal boundary decreases temperature. Furthermore, after observe one between 135 155 K, contrast two o...

Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications high sensitivity, self-powered sensor devices. One of the fundamental prerequisites for such exhibit piezoelectric properties is noncentrosymmetry crystal structures. β-Ga2O3 has been ...

A holistic approach to fully characterize the physical–chemical properties of N doped TiO2 and evaluate its true impact on photoelectrochemical applications.

Chromium iodide monolayers, which have different magnetic properties in comparison to the bulk chromium iodide, been shown form skyrmionic states applied electromagnetic fields or Janus-layer devices. In this work, we demonstrate that spin-canted solutions can be induced into monolayer by select substitution of atoms with isovalent impurities. Several concentrations and spatial configurations h...

Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images reveal long-ranged double-lobed defect features superimposed onto surface atomic lattice. We show that both doping BP and observed in STM can attributed substitutional tin...

While nitrogen doping has been investigated extensively in silicon, there is only limited information on its interaction with vacancies germanium, despite most point defect processes germanium being vacancy controlled. Thus, spin polarized density functional theory calculations are used to examine the association of lattice and for comparison silicon. The results demonstrate significant charge ...

Abstract In this work, we investigated the electronic structure and quantum capacitance of a set functionalized MoS 2 monolayers. The functionalizations have been done by using different ad-atom adsorption on Mo S monolayer. Density functional theory calculations are performed to obtain an accurate doped monolayer with varying degree doping concentration. Subsequently, in each system was estima...

We report on emission channeling experiments using the radioactive isotope Cu implanted into single crystalline i-Ge at a dose of 2.4×10 cm. The lattice location of Cu was determined from the angulardependent β emission yield, which was measured by means of a position-sensitive detector around the <111>, <100> and <110> directions. We find that already in the as-implanted state a considerable f...