For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The consists of one Si photodiode and three nMOSFETs. At fabrication, SOI substrate directly bonded on via SiO2. After bonding, the base silicon Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ substrate, SOI-Si photodiodes nMOSFETs integrated in same subst...

An optical hybrid design based on paired multimode interference couplers in silicon-on-insulator process is investigated. The device exhibits greater than 20 dB CMRR and low phase deviation (<10) over 30 nm in the C-band. The design eliminates the use of optical cross waveguides for integration with balanced photodetectors. Introduction Coherent detection scheme provides high spectral efficienc...

A reconfigurable transistor that can act both as a ntype and as a p-type MOSFET presents a flexibility of operation that may enable better circuit design [1]. Many options use sophisticated fabrication processes and architectures such as nanowires [2,3,4] to obtain a reconfigurable transistor. There are papers that report simulation results [5,6] for this kind of device. In this work we introdu...

We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a new contributioin ∼ jSH ·∇n in the first order in SOI, where jSH is the spin Hall current driven by an external electric field. This is a reaction to inverse ...

We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions, etc. In this paper, characterization results of the...

We demonstrate the design, fabrication, and characterization of silicon photonic crystal cavities realized in a silicon on insulator (SOI) platform, operating at a wavelength of 4.4 μm with a quality factor of 13,600. Cavity modes are imaged using the technique of scanning resonant scattering microscopy. To the best of our knowledge, this is the first demonstration of photonic devices fabricate...

The SLA@SOI project has researched and engineered technologies to embed SLA-aware infrastructures into the service economy. It has published models, defined architectures, developed an open-source framework and driven open standards such as the Open Cloud Computing Interface. In this demo the application of SLA@SOI in an enterprise IT use case will be demonstrated. The presentation will cover t...

The dispersive properties of silicon-on-insulator (SOI) waveguides are studied by using the effective-index method. Extensive calculations indicate that an SOI waveguide can be designed to have its zero-dispersion wavelength near 1.5 microm with reasonable device dimensions. Numerical simulations show that soliton-like pulse propagation is achievable in such a waveguide in the spectral region a...

We report frequency conversion experiments in silicon-on-insulator (SOI) directional couplers. We demonstrate that the evanescent coupling between two subwavelength SOI waveguides is strongly dispersive and significantly modifies modulational instability (MI) spectra through the coupling induced group velocity dispersion (GVD). As the separation between two 380-nm-wide silicon photonic wires de...