UNLABELLED Undoped ZnO, Ce-doped ZnO, and (Li, Ce)-codoped ZnO nanophosphors were prepared by a sol-gel process. The effects of the additional doping with Li ions on the crystal structure, particle morphology, and luminescence properties of Ce-doped ZnO were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, electron paramagnetic resonance spectro...

The quartz/Al-ZnO film/nanostructured Al-ZnO/CdSe/Cu2O extremely thin absorber solar cell has been successfully realized. The Al-doped ZnO one-dimensional nanostructures on quartz templates covered by a sputtering Al-doped ZnO film was used as the n-type electrode. A 19- to 35-nm-thin layer of CdSe absorber was deposited by radio frequency magnetron sputtering, coating the ZnO nanostructures. T...

Smart chemical sensor based on CMOS(complementary metal-oxide-semiconductor) compatible SOI(silicon on insulator) microheater platform was realized by facilitating ZnO nanowires growth on the small membrane at the relatively low temperature. Our SOI microheater platform can be operated at the very low power consumption with novel metal oxide sensing materials, like ZnO or SnO2 nanostructured ma...

In the last few years nanostructure ZnO is being intensively investigated from the growth control, structural and physical characterization, to device performance. There are now increasing interests in a wide range of ZnO-based ternary compound nanostructures offering even larger possibilities. These compounds can be useful as multi-color light-emitting device, sensors, transparent electrodes, ...

Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemi...

Ni doped ZnO (Zn1 xNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20 at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1 xNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminesc...

in this study un-doped and eu-doped zno nanorods and microrads were fabricated by chemical vapor deposition (cvd) method. the effects of annealing, synthesis temperature and structure on structural and photoluminescence properties of eu-doped zno samples were studied in detail. prepared samples were characterized using x-ray diffraction (xrd), scanning electron microscopy (sem), particle size a...

ZnO is a promising material suitable for variety of novel electronic applications including sensors, transistors, and solar cells. Intrinsic ZnO film has inferiority in terms of electronic properties, which has prompted researches and investigations on doped ZnO films in order to improve its electronic properties. In this work, aluminum (Al) doped ZnO (AZO) with various concentrations and undop...

Transparent anodes are indispensable components for optoelectronic devices. Two-dimensional (2D) materials are attracting increasing research interest due to their unique properties and promising applications. In order to design novel transparent anodes, we investigated the electronic, optical, and electrical properties of 2D ZnO monolayers doped with Al, Ga, and In using the first-principles c...

Metal oxide charge transport layers are widely used to promote the interfacial charge transport of organic optoelectronics. Nevertheless, frequently used wide-bandgap metal oxides with low electrical conductivities reveal inherent limitations in the charge transport enhancement. We present the remarkable electro-conductivity enhancement of solution processable ZnO charge transport layers upon d...