Using an InAs/GaSb composite quantum well, we demonstrate an enhancement mode single electron transistor. With a Hall bar geometry, we show that the device undergoes a transition from accumulation of two-dimensional (2D) holes in GaSb to a complete depletion and finally to an inversion layer of 2D electrons in InAs. When the top-gate area is reduced to nanometer scale, the inversion electrons a...

Recently, there has been great progress in the fabrication of various nano-devices utilizing silicon ULSI processing techniques [1]. Reliable room temperature operations have been demonstrated in a silicon single-electron quantum-dot transistor [2], a silicon selfassembled quantum-dot transistor [3], and various types of single-electron memory cells [4,5]. However, these single electron or quan...

Abstract The single-electron tunnelling (SET) devices might be scaled down almost to the molecular level. SET devices can be faster and consume less power than comparable devices implemented in CMOS or bipolar technologies. This work presents VHDL-AMS macro-modelling techniques for the compact simulation of single-electron circuits. The macromodel of the single electron transistor, which is muc...