The very high density of integration and ultra-low power consumption characteristics has given the Single electron devices promising capabilities to replace CMOS transistors in some applications. There are also alternative logic design styles, such as threshold logic, that may be more suitable and also more powerful for novel technologies such as single electron technology. In this paper, we in...

The base electrical unit, the ampere, was defined in 1960 and its realization was carried out by means of a Pellat-type balance. This experiment was typically difficult, time consuming and the achieved uncertainty was close to 8.10. As a result, in practice, the realization of electrical units does not start with ampere of which the representation requires the volt and the ohm. Two discoveries ...

Within the last five years material characterization through transmission electron microscopy (TEM) imaging has advanced to a point where identification of single defects is attainable. Novel capabilities of device structure characterization is demonstrated here. The degradation of AlGaN/GaN:Si HEMTs is investigated, defects identified and contamination elements localized.

Owing amongst other to its high electron mobility, fullerene C70, has been widely used as an electron transporting layer in organic solar cells. In this research, we report the use of C70 thin films as electron transport layers of planar perovskite solar cells (PSCs) using a conventional device structure. The thickness of the C70 layer has been optimized to achieve the best efficiency of 12%. I...

The spin of an electron placed in a magnetic field provides a natural twolevel system suitable as a qubit in a quantum computer [1]. In this work, we describe the experimental steps we have taken towards using a single electron spin, trapped in a semiconductor quantum dot, as such a spin qubit [2]. The outline is as follows. Section 1 serves as an introduction into quantum computing and quantum...

This paper describes the analysis results of the trench oxide of power devices by means of light emission analysis. Localized electron injection was observed at the upper corners of the trench edges. In addition, it was found that the electron injection into the edge of trench oxide was consistently larger than that into the center of the trench oxide during the electrical stressing. From these...