silicon thin layers are deposited on glass substrates with the thickness of 103 nm, 147 nm and 197 nm. the layers are produced with electron gun evaporation method under ultra-high vacuum condition. the optical reectance and the transmittance of produced layers were measured by using spectrophotometer. the optical functions such as, real and imaginary part of refractive index, real and imaginar...

in this paper, we propose to optimize manufacturing methods of memory cells by produced silicon nanoparticles via electrical spark discharge of silicon electrodes in water to reduce the energy consumption for low power applications. the pulsed spark discharge with the peak current of 60 a and a duration of a single discharge pulse of 60 µs was used in our experiment. the structure, morphology, ...

• Stabilization of silicogermanates by substitution Germanium for other elements. A treatment using silicon tetrachloride successfully stabilized a silicogermanate. Transformation non-stable silicogermanate into stable aluminosilicogermanate. Introduction acid sites zeolites through post-treatments. An active extra-large pore zeolite catalytic transformation bulky molecules. Owing to their pore...

Seven magnesium-containing aluminoborosilicate glasses, with three to five oxides, have been studied through comprehensive multinuclear solid-state NMR (11B, 27Al, 29Si, 23Na, 17O, and 25Mg) Raman spectroscopy. The progressive addition of cations the substitution sodium calcium by magnesium illuminate impact on glass structure. proportion tri-coordinated boron drastically increased addition, de...

Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...

This paper investigates the amount of doping concentration in silicon semiconductor using optical principle.  Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intens...