Monodisperse magnetic nanoparticles (NPs) could enable the ultra-sensitive magnetic detection of biological analytes. However, rendering these particles biocompatible has remained a challenge. We report the bio-functionalization and detection of 12-nm manganese ferrite NPs. We have achieved the site-specific binding of biotin-functionalized NPs onto avidin-patterned silicon oxide substrates and...

Thin nanowires of silicon oxide were studied by pseudopotential density functional electronic structure calculations using the generalized gradient approximation. Infinite linear and zigzag Si-O chains were investigated. A wire composed of three-dimensional periodically repeated Si4O8 units was also optimized, but this structure was found to be of limited stability. The geometry, electronic str...

We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-tempe...

We introduce a new class of siloxane-based epoxy polymers for thin film optical waveguide applications. The thickness of spun-on films can be controlled by varying either spin speed or viscosity using solvents. Cured films exhibit excellent adhesion to silicon oxide and Al and excellent thermal and chemical stability. Waveguides of ~ 2 micron thickness on silicon oxide exhibit <0.2 dB/cm loss a...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

In this paper, we propose to optimize manufacturing methods of memory cells by produced silicon nanoparticles via electrical spark discharge of silicon electrodes in water to reduce the energy consumption for low power applications. The pulsed spark discharge with the peak current of 60 A and a duration of a single discharge pulse of 60 µs was used in our experiment. The structure, morphology, ...

The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic A...

An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band be...

We describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process metrology in manufacturing of CMOS transistors for the 130 nm node and beyond. Specifically, we describe the difficulties associated with the introduction of silicon-on-insulator (SOI) substrates, alternative gate dielectrics (silicon oxynitride or metal oxides), and strained Si channe...

In this study, two silicon-containing steels with different P contents were used, and reheating tests were conducted in an industrial furnace in a hot strip plant. The effect of P on the microstructure and melting temperature of Fe2SiO4 in silicon-containing steels was investigated using a backscattered electron (BSE) detector and energy-dispersive spectroscopy (EDS). The melting process of Fe2...