We demonstrate a silicon nitride trench waveguide deposited with bowtie antennas for plasmonic enhanced optical trapping. The sub-micron silicon nitride trench waveguides were fabricated with conventional optical lithography in a low cost manner. The waveguides embrace not only low propagation loss and high nonlinearity, but also the inborn merits of combining micro-fluidic channel and waveguid...

We examined CD133 distribution in a human hepatoblastoma cell line (HuH-6 clone 5). We directly observed the cultured cells on a pressure-resistant thin film (silicon nitride thin film) in a buffer solution by using the newly developed atmospheric scanning electron microscope (ASEM), which features an open sample dish with a silicon nitride thin film window at its base, through which the scanni...

We present the fabrication of parylene-based hollow nanomechanical resonators, following a simple two step fabrication process with a thermal budget of less than 120°C. This process is ideal for fast prototyping and compatible with most materials used in microand nano-fabrication. In particular, the example we present here shows a hybrid structure with silicon nitride and parylene, but we have ...

2 A process to fabricate functional polysilicon structures above large (43 4 mm ) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of membrane stress and deformation after fabrication, which was done by complete removal of the sacrific...

The transport of bacterial strain DA001 was examined in packed quartz sand under a variety of environmentally relevant ionic strength and flow conditions. Under all conditions, the retained bacterial concentrations decreased with distance from the column inlet at a rate that was faster than loglinear, indicating that the deposition rate coefficient decreased with increasing transport distance. ...

Silicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: crystalline silicon-on-insulator (SOI) strip, polycrystalline silicon (polySi) strip, silicon nitride strip and SPARROW waveguides. The loss of 15 dB/cm measured through an SOI wav...

The non-volatile memory is a crucial functionality for wide range of applications in photonic integrated circuits, however, it still poses challenge silicon technology. This problem has been overcome the microelectronic industry by using SONOS (silicon-oxide-nitride-oxide-silicon) cells, which non-volatility enabled dielectric trapping layer such as nitride. Analogously, this work, similar appr...

Ever since Gallium Nitride based high electron mobility transistor (HEMT) operation was demonstrated (Khan, 1993), there is a tremendous interest in the design and growth of GaN based transistors for high power device applications. The nitride semiconductors have wide application in the fields of high electron mobility transistors (HEMTs), light emitting diodes, and various high power electroni...

Small amplitude (50 μm) reciprocating wear of hydrogen-containing diamond-like carbon (DLC) films of different compositions has been examined against silicon nitride and polymethyl-methacrylate (PMMA) counter-surfaces, and compared with the performance of an uncoated steel substrate. Three films were studied: a DLC film of conventional composition, a fluorine-containing DLC film (F-DLC), and si...

Structure A device’s cost effectiveness starts with leveraging existing production infrastructure. EPC’s process begins with silicon wafers. Utiilizing existing silicon processing equipment, a thin layer of Aluminum Nitride (AlN) is grown on the Silicon to isolate the device structure from the Substrate. The isolation layer for 200 V and below devices is 300 V. On top of this, a thick layer of ...