نتایج جستجو برای: silicon nanowires

تعداد نتایج: 93681  

2008
Mark Reed David Routenberg

Silicon nanowire sensors are fabricated from the active silicon layer of silicon-on-insulator (SOI) wafers and used for label-free sensing of specific proteins. A fabrication method is demonstrated which avoids the integration difficulties inherent in a bottom-up approach, without the drastic decrease in carrier mobility usually associated with reactiveion-etched nanowires. Nanowire devices are...

2012
ABRAR ISMARDI CHANG Fu DEE A. A. HAMZAH IllE C. GEBESHuBER

Co-synthesis of In2O3 and ZnO nanowires (NWs) were grown on silicon and alumina substrates using vapour transport deposition method. Their morphological structures showed that the NWs were rather aligned on silicon substrate and randomly oriented on alumina substrate. The formation of NWs on silicon substrate was found to be dominated by the growth of ZnO NWs while that on alumina substrate was...

2010
Liangbing Hu Hui Wu Seung Sae Hong Lifeng Cui James R. McDonough Sy Bohy Yi Cui

We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour– liquid–solid Si nanowire gr...

Journal: :Chemical communications 2011
Liangbing Hu Hui Wu Seung Sae Hong Lifeng Cui James R McDonough Sy Bohy Yi Cui

We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire gro...

Journal: :Journal of the American Chemical Society 2002
Zheng Wei Pan Zu Rong Dai Chris Ma Zhong L Wang

The vapor-liquid-solid (VLS) process is a fundamental mechanism for the growth of nanowires, in which a small size (5-100 nm in diameter), high melting point metal (such as gold and iron) catalyst particle directs the nanowire's growth direction and defines the diameter of the crystalline nanowire. In this article, we show that the large size (5-50 microm in diameter), low melting point gallium...

Journal: :Nano letters 2011
Yaping Dan Kwanyong Seo Kuniharu Takei Jhim H Meza Ali Javey Kenneth B Crozier

Nanowires have unique optical properties and are considered as important building blocks for energy harvesting applications such as solar cells. However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude, often resulting in the low efficiency (a few percent or less...

Journal: :ACS nano 2013
Bin Wang Xianglong Li Xianfeng Zhang Bin Luo Meihua Jin Minghui Liang Shadi A Dayeh S T Picraux Linjie Zhi

Silicon has been touted as one of the most promising anode materials for next generation lithium ion batteries. Yet, how to build energetic silicon-based electrode architectures by addressing the structural and interfacial stability issues facing silicon anodes still remains a big challenge. Here, we develop a novel kind of self-supporting binder-free silicon-based anodes via the encapsulation ...

2013
Alon Hever Jonathan Bernstein Oded Hod

A density functional theory study of the structural and electronic properties and relative stability of fluorinated sp silicon nanotubes and their corresponding silicon nanowires built along various crystallographic orientations is presented. The structural stability is found to increase linearly with fluorine surface coverage, and for coverages exceeding 25%, the tubular structures are predict...

2011
Lei Zhang Tielin Shi Zirong Tang Dan Liu Shuang Xi Xiaoping Li Wuxing Lai

Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matri...

Journal: :Nanotechnology 2011
Dan Liu Tielin Shi Zirong Tang Lei Zhang Shuang Xi Xiaoping Li Wuxing Lai

We propose a novel technique of integrating silica nanowires to carbon microelectrode arrays on silicon substrates. The silica nanowires were grown on photoresist-derived three-dimensional carbon microelectrode arrays during carbonization of patterned photoresist in a tube furnace at 1000 °C under a gaseous environment of N(2) and H(2) in the presence of Cu catalyst, sputtered initially as a th...

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