Valery I. Levitas,1,* Yanzhang Ma,2 Emre Selvi,2 Jianzhe Wu,2 and John A. Patten3 1Departments of Aerospace Engineering, Mechanical Engineering, and Material Science and Engineering, Iowa State University, Ames, Iowa 50011, USA 2Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409, USA 3Department of Manufacturing Engineering, Western Michigan University, Kalamazoo,...

The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane...

We report on the polarization selection rules of inter-Landau-level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm(-1) on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and antisymmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau-level transitions, respectively. Fr...

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensit...

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization, the observed temperature-dependent parabolic magnetoresistivity is a manifestation of the electron-electron interaction. We can consistently describe the data with a model for diffusive (magneto)transport t...

This chapter looks at the role of silicon carbide (SiC) in microsystem technology. It starts with an introduction into the wide bandgap (WBG) materials and the properties that make them potential candidates to enable the development of harsh environment microsystems. The future commercial success of WBG microsystems depends mainly on the availability of high-quality materials, well-established ...

The optimum length of a monolith tube is one for which near-hundred percent conversion is attained, and at the same time, the catalyst over the ntire length of the tube is utilized. In practice, the length is adjusted by stacking monolith plugs end-to-end. In this study, the repercussions of uch a practice are investigated numerically with the goal to determine if a tube of length 2L demonstrat...

A new material, Fe203 supported on high specific surface area Sic, is very efficient for the H2S removal from hot exhaust gas. The specific properties of the silicon carbide allows a very large number of sulfidationJregeneration cycles.