نتایج جستجو برای: sic nanotube

تعداد نتایج: 29726  

1999
A. K. Speck A. M. Hofmeister M. J. Barlow

Pre-solar grains of silicon carbide found in meteorites and interpreted as having had an origin around carbon stars from their isotopic composition, have all been found to be of the β-SiC polytype. Yet to date fits to the 11.3-µm SiC emission band of carbon stars had been obtained only for α-SiC grains. We present thin film infrared (IR) absorption spectra measured in a diamond anvil cell for b...

ژورنال: :international journal of new chemistry 0

electrical sensitivity of a boron nitride nanotube (bnnt) was examined toward (c3h4) molecule by using density functional theory (dft) calculations at the b3lyp/6-31g (d) level, and it was found that the adsorption energy (ead) of methylacetylene (c3h4) the pristine nanotubes is a bout -1.78kcal/mol. but when nanotube have been doped with si and al atomes, the adsorption energy of methylacetyle...

ژورنال: :international journal of new chemistry 0

electrical sensitivity of a boron nitride nanotube (bnnt) was examined toward hydroquinone (c6h4(oh)2) molecule by using density functional theory (dft) calculations at the b3lyp/6-31g(d) level, and it was found that the adsorption energy (ead) of hydroquinone on the pristine nanotube is  a bout -7.77kcal/mol. but when nanotubes have been doped with si and al atomes, the adsorption energy of hy...

ژورنال: :international journal of new chemistry 0

abstract: electrical sensitivity of a boron nitride nanotube (bnnt) was examined toward ethyl acetylene (c4h6) molecule by using density functional theory (dft) calculations at the b3lyp/6-31g (d) level, and it was found that the adsorption energy (ead) of ethyl acetylene the pristine nanotubes is about -1.60kcal/mol. but when nanotube has been doped with si and al atoms, the adsorption energy ...

2007
Stefan Janz Gerhard Willeke Elke Scheer

Dissertation zur Erlangung des akademischen Grades Doktor der Naturwissenschaften Introduction Figure 1.1: One possible amorphous silicon (white) and carbon (black) network with incorporated hydrogen (small black dots) a-SiC:H. 20 Figure 1.2: Fourier transformed infrared (FTIR) absorption spectra for a typical stoichiometric SiC layer as deposited at 350°C. 21 Figure 1.3: Auger electron spectro...

2017
Eiichi Murakami Takahiro Furuichi Tatsuya Takeshita Kazuhiro Oda

2018
Boris Bukh Christopher Cox

How can d+k vectors in R be arranged so that they are as close to orthogonal as possible? In particular, define θ(d, k) := minX maxx 6=y∈X |〈x, y〉| where the minimum is taken over all collections of d + k unit vectors X ⊆ R. In this paper, we focus on the case where k is fixed and d → ∞. In establishing bounds on θ(d, k), we find an intimate connection to the existence of systems of ( k+1 2 ) e...

Journal: :CoRR 2013
Peng Li Rodrigo C. de Lamare

In this paper, a low-complexity multiple feedback successive interference cancellation (MF-SIC) strategy is proposed for the uplink of multiuser multiple-input multiple-output (MU-MIMO) systems. In the proposed MF-SIC algorithm with shadow area constraints (SAC), an enhanced interference cancellation is achieved by introducing constellation points as the candidates to combat the error propagati...

2016
Jianwu Sun Valdas Jokubavicius L. Gao Ian Don Booker Mattias Jansson Xinyu Liu M. Linnarsson P. Wellmann I. Ramiro A. Marti Rositsa Yakimova Mikael Syväjärvi Lu Gao Ian Booker Jan P. Hofmann Emiel J. M. Hensen Margareta Linnarsson Peter Wellmann Iñigo Ramiro Antonio Marti

There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy. In this work, we explore 3C-SiC as an attractive material towards solar-driven energy conversion applications: (i) Boron doped 3C-SiC as candidate...

2007
Jingchun Zhang Carlo Carraro Roger T. Howe Roya Maboudian

Polycrystalline 3C-SiC (poly-SiC) is a promising structural material for microelectromechanical systems (MEMS) used in harsh environments. In order to realize poly-SiC based MEMS devices, the electrical, mechanical and metal contact properties of poly-SiC have to be optimized. The poly-SiC films, reviewed here, are deposited by low pressure chemical vapor deposition using 1,3-disilabutane (DSB)...

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