نتایج جستجو برای: si3n4
تعداد نتایج: 1511 فیلتر نتایج به سال:
Sintered blanks for spherical bodies of rolling from silicon nitride ceramics were obtained using the addition an yttrium-containing organoalumoxane ― element organic oligomer, soluble in traditional solvents and pyrolysis into oxide aluminum-sintering additive a given mass ratio Al2O3/Y2O3 = 3/1. Studies conducted thermogravimetry, X-ray phase analysis, optical electron scanning microscopy sho...
In this study, the radial behavior of disks are made different materials and increasing from inner surface to outer under temperature distribution was analyzed analytically, assuming that modulus elasticity does not change with temperature. The resulting calculations were supported by ANSYS program. Boron carbide (B4C) is often used in space industry our country. model first disc material boron...
For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10(3), at Vds = -5 V.
We demonstrate the fabrication of a low loss broadband vertical coupler for use in the 3D integration of Si3N4 based planar waveguides. Coupling loss of 0.2 dB was achieved and interaction between layers investigated. OCIS codes: (230.0230) Optical Devices; (230.7390) Waveguides, planar; (230.4170) Multilayers.
We propose a novel and highly sensitive mechanooptical device for gas-sensing through nano-displacements, based on micro-cantilevers, supplied with a selective gas absorbing layer (Pd), suspended above a Si3N4 grated waveguide (GWG). We present the simulation and preliminary experimental results, which indicate the sensing of nanodisplacements, an important intermediate step for the gas-sensing...
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