The article outlines an inclusive list of thin film Schottky diodes (TFSD) references. review audits the fabrication and characterization TF metal-semiconductor (MS) diode, a TFSD. work functions metal ( ϕ m ) semiconducting material s determines whether established MS contact is ohmic or rectifying. Current-voltage (I – V) capacitance-voltage (C characterizations are essential electrical trans...

The recently studied planar-doped triangular barrier structure is analyzed theoretically for a possible application as a barrier injection transit time device (BARMT). The small signal impedance as well as the large-signal power characteristics are calculated. Compared to the conventional Bm structures the new device offers a sign&ant improvement in its frequency range and generated power. The ...

This paper studies transient thermal characteristics of ?-Ga2O3 Schottky barrier diode (SBD) packaged in TO-220. Planar and metal-oxide-semiconductor (MOS) trench anode types are evaluated. Junction temperature is estimated from dependency forward conduction measuring SBD characteristics. confirms the completeness processed junction on with extracted ideal factor height SBDs. The measured devel...

Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that...

This work describes the simulation and modeling of current voltage characteristics of polymer light emitting diode. To understand the device characteristics first a single layer organic device with single carrier injection is studied. The simulations are used to clarify the role of barrier height, device thickness and mobility. A new analytical model is developed based on a simple mobility mode...

Optical and structural characterizations were conducted on an InGaAsN quantum well (QW) with large energy bandgap barrier material consisting of InGaAsP (Eg 1⁄4 1:62 eV) grown by metalorganic chemical vapor deposition. A growth pause annealing technique substantially improves both the structural and the optical quality of the QW. With an optimum growth pause of 14 s, surface roughness reduces b...

This work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N′-di(naphthalene-1-yl)-N,N′-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well...

Despite several years of research into graphene electronics, sufficient on/off current ratio I(on)/I(off) in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation...

A square-loop slot antenna, printed at the back surface of an extended hemispherical lens, is examined as a candidate for ( ) millimeter-wä e mm-wa ̈e integrated-circuit Schottky-diode mixers. The loop slot is etched in a microwä e substrate, and coupled to a microstrip line section printed on the other side of the substrate. A Schottky barrier diode shunted to ground is the mixing de ̈ice. The i...