We report on a 32 × silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The is fabricated 200-mm silicon-on-insulator wafers in commercial complementary metal-oxide-semiconductor (CMOS) foundry. device has maximum on-chip loss of 7.7 dB and an extinction ratio 50.8 dB. switching voltage 9.45 V the 20-dB bandwidth 28.7 nm. Our work shows promi...

The range of DC output voltage the photovoltaic cell is about 20 - 45 V dc . At generally electrical load use an AC 220 ac for one phase and a 380 three load. So that has to raise up 400 then it changed with inverter. In this paper, conversion ratio high gain power converter will be analyzed simulated PSIM software. From analysis simulations show can achieved Vdc from around input Vdc, duty cyc...

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 35 kV. The maximum avalanche gain and minimum on-state resistance of PCSS are 1385 0.58 Ω, respectively, which the highest values reported date. Finally, influence bias on stability analyzed. evaluated calculated. results show that jitter at voltages 30 kV 164.3 ps 10...

A [Formula: see text] quasi-optical ring resonator consisting of an input coupler and three mirrors has been designed tested. low-loss silicon wafer in the provides output coupling stored power when irradiated by a pulse from laser. The created pulses excited continuously operating source, achieving gain 16. In fully tuned ring, higher is achievable. If was used with pulsed source having length...

Zinc oxide (ZnO) nanostructures are become an important matter of study since they can be used in nanoscale optoelectronics for applications such as memory storage, logic circuits, solid-state gas-, bioor light-sensors, solar cells, field effect transistors, field effect displays, and short wavelength light emitting diodes. ZnO is a semiconductor with a direct and wide band-gap around 3.4 eV, a...

We present a transient response study of semiconductor based plasmonic switch. The proposed device operates through active control and modulation localized electron density waves, i.e., surface plasmon polaritons (SPPs) at degenerately doped In 0.53 Ga 0.47 As PN ++ junctions. A set devices is designed fabricated, its optical electronic behaviors are studied both experimentally theoretically. O...

As the semiconductor industry contemplates the end of Moore’s Law, there has been considerable interest in novel materials and devices (IRTS, 2006). Technologies such as molecular switches and carbon nanowire arrays offer a path to scaling beyond the limits of conventional CMOS (FENA, 2006). Most such technologies are in the exploratory phases, still years or decades from the point when they wi...

Keywords: SRAM Dynamic back-gate design FinFET Robust Low power a b s t r a c t In this paper, we propose a robust SRAM design which is based on FinFETs. The design is performed by dynamically adjusting the back-gate voltages of pull-up transistors. For the write operation, we use an extra write driver which sets the desired back-gate voltages during this operation. This approach considerably i...