This paper addresses the difficulty of designing 1-V capable analog circuits in standard digital complementary metal–oxide–semiconductor (CMOS) technology. Design techniques for facilitating 1-V operation are discussed and 1-V analog building block circuits are presented. Most of these circuits use the bulk-driving technique to circumvent the metal– oxide–semiconductor field-effect transistor t...

We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance en...

We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength me...

Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene ...

The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-pr...

As continuous geometric scaling of conventional metal oxide semiconductor field effect transistors(MOSFETs) are facing many fundamental challenges, therefore, new alternatives has to be introduced to provide high performance integrated chips. This paper gives insight on various recent innovations in device engineering for microelectronics and nanoelectronics. The recent developments are mainly ...

Recent advances in complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-oxide semiconductor field-effect transistors (MOSFETs) for RF/microwave applications. This paper covers the recent advances and current status of mainstream CMOS as the dominating techno...

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