GaAs/GaAlAs heterostructure lasers with a monolithic confocal unstable resonator were demonstrated. The curved mirrors satisfying the confocal condition were fabricated by etching. Close to threshold, the lasers operate in a single lateral mode with a nearly collimated output beam. A single-lobe far-field intensity distribution as narrow as 1.9 degrees full width at half maximum was measured.

The trade-off between the effect of leakage suppression and the increase of related optical loss due to placement of the p-doping in 1.3-1.55μm InGaAsP MQW edgeemitting lasers is detailed. The effect of the Zn doping profile on laser characteristics is illustrated by experimental results obtained for telecom lasers and high power lasers. The design approach combining broadened waveguides with p...

We study the dynamics and bifurcations of a semiconductor laser with delayed filtered feedback, where a part of the output of the laser re-enters after spectral filtering. This type of coherent optical feedback is more challenging than the case of conventional optical feedabck from a simple mirror, but it provides additional control over the output of the semiconductor laser by means of choosin...

Reduction of the intensity noise in semiconductor lasers is an important subject for the higher performance of an application. Simultaneous usage of the superposition of high frequency current and the electric negative feedback loop was proposed to suppress the noise for the higher power operation of semiconductor lasers. Effective noise reduction of more than 25 dB with 80 mW operation was exp...

We report phase-conjugate feedback into a fluorozirconate optical fiber amplifier at infrared wavelengths. By using a semiconductor laser diode at 807 nm, a grating is established in photorefractive BaTiO(3) that, in the ring configuration, provides feedback into the amplifier necessary for laser action. Once written, the grating is self-sustaining, and lasing is observed even after the laser d...

The nonlinear dynamics of an optically injected semiconductor laser are explored for radio-over-fiber uplink transmission. Under optical injection locking, the laser at the base station is operated in the period-one oscillation state, where its intensity oscillates at a tunable microwave frequency. When the oscillation is tuned to the subcarrier frequency, it is further locked by the uplink mic...

Multiwavelength semiconductor laser source for dense wavelength division multiplexing (DWDM) applications based on a novel dispersive cavity is described. Multiline lasing on the basis of a single-diode laser chip and multi-stripe diode laser is analyzed theoretically and demonstrated experimentally. Simultaneous lasing across 80% of the FWHM of the luminescence bandwidth of the AlGaAs active m...