Two-dimensional (2D) magnetic materials are essential for the development of next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure been reported to host coexisting magnetism topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) reveal their spin-dependent transp...

A three-valued D-flip-flop (D-FF) circuit and a two-stage shift register built from InGaAs-based multiple-junction surface tunnel transistors (MJSTT) and Si-based metal-oxide-semiconductor field effect transistors (MOSFET) have been demonstrated. Due to the combination of the MJSTTs latching function and the MOSFETs switching function, the number of devices required for the D-FF circuit was gre...

Transport in a single planar tunnel junction with electrodes made of a ferromagnetic semiconductor is analyzed theoretically in the zero-temperature limit. Tunneling current and both (in-plane and out-of-plane) components of the spin torque exerted on one of the ferromagnetic electrodes are determined as a function of the angle θ between magnetic moments of the electrodes. The influence of the ...

Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report a "band bending junction", new type semiconductor homojunction whose surface potential landscape depends solely on difference thickness between the two regions atop buried heterojunctio...

The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving r...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

We theoretically study the emission statistics of a weakly nonlinear photonic dimer during coherent oscillations. We show that the phase and population dynamics allow to periodically meet an optimal squeezing condition resulting in a strongly nonclassical emission statistics. By considering an exciton-polariton Josephson junction driven resonantly by a pulsed classical source, we show that a si...

Abstmct-The noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise and modulation characteristics of a laser diode combined with electronic components. The intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven...

Kehan Tian,1,* William Arora,2 Satoshi Takahashi,2 John Hong,3 and George Barbastathis4 1IBM Semiconductor Research and Development Center, Hopewell Junction, New York 12533, USA 2Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA 3Qualcomm, 5775 Morehouse Drive, San Diego, California 92121, USA 4Singapore-MI...