Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED) principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the...

We investigated the use of plasmonic nanotechnology to enhance the performance of semiconductor infrared detectors. An increase of quantum efficiency, responsivity and specific detectivity is obtained by applying transparent conductive oxide (TCO) nanoparticles onto the surface of a photodetector. To this purpose we considered uncooled mercury cadmium telluride (HgCdTe) photoconductive detector...

The qubit Rabi oscillations are known to be non-decaying (though with a fluctuating phase) if the qubit is continuously monitored in the weak-coupling regime. In this paper we propose an experiment to demonstrate these persistent Rabi oscillations via low-frequency noise correlation. The idea is to measure a qubit by two detectors, biased stroboscopically at the Rabi frequency. The low-frequenc...

We review the current status of vertex detectors (tracking microscopes for the recognition of charm and bottom particle decays). The reasons why silicon has become the dominant detector medium are explained. Energy loss mechanisms are reviewed, as well as the phvsics and technology of semiconductor devices, emohasizing the areas of most relevance for detectors. The r&in design options (microstr...

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid su...

Despite the potentials and the efforts put in the development of uncooled carbon nanotube infrared detectors during the past two decades, their figure-of-merit detectivity remains orders of magnitude lower than that of conventional semiconductor counterparts due to the lack of efficient exciton dissociation schemes. In this paper, we report an extraordinary photocurrent harvesting configuration...

Although reliable models may predict the detection efficiency of semiconductor detectors, measurements are needed to check the parameters supplied by the manufacturers, namely, the thicknesses of dead layer, beryllium window, and crystal active area. The efficiency of three silicon detectors has been precisely investigated in their entire photon energy range of detection. In the zero to a few k...

Among the 3D electrode Si detectors for high energy particle and X-ray detection, traditional 3D-Trench detector is a semiconductor that widely used discussed. Aiming at removing shortcomings of such as uneven electric field distribution, asymmetric potential, existence some dead zone, we propose new type 3D-Spherical Electrode Detectors carry out extensive systematic studies their physical pro...