The possible origins of leaky characteristics of Schottky barrier on p-GaN have been investigated. The as-grown samples did not show any electrical activities using Hall measurements. Ni diodes made on as-activated samples, either at 950 C for 5 s or at 750 C for 5 min exhibited quasiohmic behavior. Upon sequential etching of the sample to remove a surface layer of 150 Å, 1200 Å, and 5000 Å fro...

The Schottky electron emitter is the most frequently used electron source in electron microscopes. A suppressor electrode around the emitter is usually employed to prevent emission from the shank of the cathode. A concept of operating the Schottky emitter without the suppressor electrode is proposed with the aim of lowering the potential of the extractor electrode. Simulation results show that ...

MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a considerable Schottky barrier exists between MoS2 and contact metal, hindering the further study of spin transport and spin injection in MoS2. Although substantial p...

In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I-V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approximately 10(4). From temperature-dependent I-V measurements we obtained a SBH of 0.661 eV for a Zn...

PN junctions in nanoscale materials are of interest for a range of technologies including photodetectors, solar cells and light-emitting diodes. However, Schottky barriers at the interface between metal contacts and the nanomaterial are often unavoidable. The effect of metalsemiconductor interfaces on the behavior of nanoscale diodes must be understood, both to extract the characteristics of th...

We exhibit pairs of infinite-volume, hyperbolic three-manifolds that have the same scattering poles and conformally equivalent boundaries, but which are not isometric. The examples are constructed using Schottky groups and the Sunada construction. In memory of Evsey Dyn’kin

Despite silicon carbide’s (SiC’s) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes and thyristors, and Schottky contact-based devices operating at high temperatures. The performance and reliability issues unique to SiC discuss...

The impact of the assumptions inherent in using the Mott-Schottky theory to identify deep-level electronic states in semiconductors was assessed by comparison to the results of a less restrictive mathematical model. The model, developed in another paper, treated the transport and recombination reactions involving electrons, holes, and electronic states located within the bandgap. The capacitive...