Oxygen vacancy motion and agglomeration into Magnéli phases are often associated with resistive switching in TiO2 [1-2]. However, the defect distribution and changes of device resistance are still poorly linked and require direct analysis. Extensive ex situ analysis has lead to proposed switching mechanisms that invoke defect formation/motion, but direct observation of defect evolution is still...

A simple set of evolution equations is derived for the resistive wall mode in a large aspect-ratio, rotating, viscous, tokamak plasma. The equations take into account the nonlinear deceleration of the plasma rotation generated by mode interaction with both the resistive wall and a static error field. Furthermore, the equations are largely able to explain resistive wall mode data recently obtain...

Establishing satisfactory calculation methods of lake evaporation has been crucial for research and management of water resources and ecosystems. A 30 year dataset from Dickie Lake, south-central Ontario, Canada added to the limited long-term studies on lake evaporation. Evaporation during ice-free season was calculated separately using seven evaporation methods, based on field meteorology, hyd...

Resistive edge modes in a shifted noncircular tokamak geometry are investigated in the electrostatic limit. The reduced Braghinskii equations are used as a model for the electrons and an advanced fluid model for the ions. An eigenvalue problem is derived from these equations which is solved numerically. It is found that the resistive ballooning modes are stabilized by plasma elongation for peak...

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment. We suggest that the bipolar resistive switching is dominated by the trapping/detrapping of electrons at the BaTiO3-Cu interface. In addition, we demonstrate that...

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for th...

Two digital LSI implementation methods for nonlinear resistive networks are proposed; one is for pixel-parallel operation and the other is for pixel-serial operation. we have designed digital circuits that emulate the operation of analog nonlinear resistive networks by discrete-time dynamics based on clock operation. The steady state of the networks is obtained by repeating the updating sequenc...