Microwave-assisted liquefaction has shown potential for rapid thermal processing of lignocellulosic biomass. The efficiency of microwave heating depends largely on the dielectric properties of the materials being heated. The objective of this study was to investigate the dynamic interactions between microwave energy and the reaction system during the liquefaction of a woody biomass sample. The ...

In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors QDIPs at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700 °C, as a result of thermal interdiffusion of the quantum dots QDs . Correspondingly, the spectral response from the ann...

We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonoptimally grown GaInNAs p–i–n structures, with nominal compositions of 10% In and 3.8% N, can be impr...

Highly luminescent GaAs 1~x N x alloys were successfully grown by atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition x of as high as 5.6% was obtained using trimethylgallium (TMGa), tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy) precursors. In-situ and post-growth rapid thermal annealing was performed to enhance the optical quality of the material. ...

The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO/ZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the supp...

Thin 001 textured FePt and CoPt polycrystalline films (5 nm) were deposited with an MgO polycrystalline underlayer on an oxidized Si substrate followed by a Rapid Thermal Annealing (RTA) process. Structural analysis indicated the samples to be fully ordered after 10 minutes (min) of RTA at 700 C. The magnetic hysteresis exhibited strong perpendicular anisotropy and a coercivity ( ) between 6 an...

The solution of reduction to the pole (RTP) of magnetic data in the wavenumber domain faces a long standing difficulty of instability when the observed data are acquired at low magnetic latitudes or at the equator. We develop a solution to this problem that allows stable reconstruction of the RTP field with a high fidelity even at the magnetic equator. The solution is obtained by inverting the ...

Because of their very large integration capabilities and continuous scaling, the CMOS devices are the basic element in the currentintegrated circuits. Their scaling up to sub-micrometric scale presents advantages like diminution of power consumption, faster devices and a larger level of integration. But the physics limitations begin to be important at these dimensions, anomalous effects like ho...

A new approach based on a genealogical decision tree is suggested for solving an open-loop tracking problem. The algorithm associates Gaussian distributions to both the norms of the control actions and the tracking errors. It solves the optimization problem sequentially, using random resampling from a population of solutions. This stochastic search model can be interpreted as a simple genetic p...

Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry" (1998). Faculty Publications from the Department of Electrical and Computer Engineering. 23. Dopant profiles were determined by ex situ Fourier transform infrared variable-angle spectroscopic ellipsometry. The technique exploits carrier absorption in the mid-infrared spectral range and combines the ...