نتایج جستجو برای: random access time

تعداد نتایج: 2358137  

2009
Tamara Menezes Arruda

This work considers a methodology and its application in a memory system, in such a way that through well defined steps, it makes possible the use of not qualified memory components for space area with the specific degree of reliability. The methodology uses the application of the screening technique with the purpose to know the characteristics of reliability of these components and the elimina...

2017
Nisheeth Srivastava Ed Vul

You cannot know the contents of a memory until after you have actually retrieved it. This paper considers the implications of this straightforward observation upon the psychological process of preference construction. We show that this constraint renders observers with random access memory susceptible to tail risks. We show that this difficulty can be rectified by permitting observers to weight...

Journal: :IEEE transactions on neural networks 1993
Trevor G. Clarkson Yelin Guan John G. Taylor Denise Gorse

The probabilistic RAM (pRAM) is a hardware-realizable neural device which is stochastic in operation and highly nonlinear. Even small nets of pRAMs offer high levels of functionality. The means by which a pRAM network generalizes when trained in noise is shown and the results of this behavior are described.

2009
Neil Zhenqiang Gong Guangzhong Sun Jing Yuan Yanjing Zhong

Efficient processing of top-k queries has become a classical research area. Fagin et al. proposed the “middleware cost” for a top-k query algorithm. In some scenario, there is no way to perform a random access, and Fagin et al. proposed NRA (No Random Access) algorithm for that. In this paper, we investigate the intrinsic relation between top-k queries and K-skyband queries. Based on that relat...

2015
Jelani Nelson Johnny Ho

In terms of exact numbers, hard drives support somewhere around 140MB/sec of sequential reads/writes, but only 120I/O’s/sec when doing reads/writes on random 4KB chunks. This is because the disk must physically spin to the read/write location. RAM supports somewhere around 5-10GB/sec of reads/writes, with much less penalty for random access. SSDs/Flash is somewhere in the middle, but with the i...

2015
P. Pavan Kumar Ramana Reddy Prasanna Rani

Portable devices demand for low power dissipation. To reduce power dissipation, the subsystem in a device needs to be designed to operate at low power and also consume low power. Significant progress has been made in low power design of dynamic RAM’s. Static RAM’s are also critical in most VLSI based system on chip applications. Basic SRAM bit cell consists of 6T. Few designs using 4T are also ...

2012
A. Alfadhel J. Kosel Y. Gianchandani

Related Articles Precessional reversal in orthogonal spin transfer magnetic random access memory devices Appl. Phys. Lett. 101, 032403 (2012) Hot spin-wave resonators and scatterers J. Appl. Phys. 112, 013902 (2012) Magnetic domain wall transfer via graphene mediated electrostatic control Appl. Phys. Lett. 101, 013103 (2012) Perpendicular-magnetic-anisotropy CoFeB racetrack memory J. Appl. Phys...

2014
Zizhen JIANG Zizhen Jiang

Lorem ipsum dolor sit amet, consectetur adipiscing elit. Increasing dependence of the functionality and performance of computing system on the characteristics of the memory subsystem calls for further study on various memory technologies. Conventional memory technologies, such as SRAM, DRAM and FLASH, suffer from the formidable device scaling challenges, which makes researchers pay more attenti...

Journal: :J. Embedded Computing 2005
Angel Dominguez

Title of dissertation: HEAP DATA ALLOCATION TO SCRATCH-PAD MEMORY IN EMBEDDED SYSTEMS Angel Dominguez Doctor of Philosophy, 2007 Dissertation directed by: Professor Rajeev K. Barua Department of Electrical and Computer Engineering This thesis presents the first-ever compile-time method for allocating a portion of a program’s dynamic data to scratch-pad memory. A scratch-pad is a fast directly a...

2017
Emeline Souchier Marie-Paule Besland Julien Tranchant Benôıt Corraze Philippe Moreau Richard Retoux Claude Estournès Pascale Mazoyer Laurent Cario Etienne Janod J. Tranchant B. Corraze P. Mazoyer L. Cario E. Janod

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