نتایج جستجو برای: quantum well lasers
تعداد نتایج: 1796276 فیلتر نتایج به سال:
The pressure dependence of the components of the recombination current at threshold in 1.3m GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current with increasing pressure is associated with the unusual increase of the Auger-related nonradi...
The three-dimensional confinement of electrons and holes in the semiconductor quantum dot (QD) structure profoundly changes its density of states compared to the bulk semiconductor or the thin-film quantum well (QW) structure. The aim of this paper is to theoretically investigate the microwave properties of InAs/InP(311B) QD lasers. A new expression of the modulation transfer function is derive...
Quantum-cascade lasers operating at 4.7, 3.5, and 2.3 THz have been used to achieve cyclotron resonance in InAs and InSb quantum wells from liquid-helium temperatures to room temperature. This represents one of the first spectroscopic applications of terahertz quantum-cascade lasers. Results show that these compact lasers are convenient and reliable sources with adequate power and stability for...
Quantum dot lasers with an active region consisting of just a single quantum dot layer have been grown using molecular beam epitaxy and characterized from 80 to 300 K. The quantum dot lasers lase from excited states over the entire temperature range. The characteristic temperature is 185$10 K over the temperature range 80—141 K and decreases to 111$2 K from 141—304 K. The effects of scattering ...
We present quantum Maxwell-Bloch equations (QMBE) for spatially inhomogeneous optical semiconductor devices taking into account the quantum noise effects which cause spontaneous emission and amplified emission. Analytical expressions derived from the QMBE are presented for the spontaneous emission factor β and the far field pattern of amplified spontaneous emission in broad area quantum well la...
The dynamical response of InAs/GaAs quantum-dot microdisk lasers has been experimentally investigated using femtosecond optical pumping. Because surface recombination and carrier diffusion are suppressed in the quantum dots, the response speed of a quantum-dot microdisk laser is much faster than that of a quantum-well microdisk laser. A turn-on time as short as 7.8 ps has been achieved in a qua...
Progress in the search for the optimum light source : squeezing experiments with a frequency doubler
AbstraeL Real lasers show inuinsic noise well above the standard quantum noise limit. We review the propenies of lasers and of techniques to suppress this noise. Experimental results of elenroqxic feedback techniques and of squeezing in a sewnd harmonic genenuor are presented. pinally we show that the optimum light s o w e could well be a cascade of different cavities, each one performing a spe...
To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...
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