نتایج جستجو برای: quantum well laser

تعداد نتایج: 1937385  

Journal: :Optics letters 2012
Abhijeet Ardey Jimyung Kim Edris Sarailou Peter J Delfyett

We report a novel quantum dot based laser design where a stable high-Q master laser is used to injection lock a passively mode-locked monolithic colliding pulse slave laser. Coupling between the crossed orthogonal laser cavities is achieved through a common monolithically integrated saturable absorber, which results in the locking and hence reduction of the timing jitter as well as the long-ter...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت مدرس 1386

چکیده ندارد.

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی امیرکبیر(پلی تکنیک تهران) - دانشکده مهندسی برق 1387

به دلیل نیاز تراشه ها به اتصالات نوری ترانزیستور لیزر با قابلیت ارسال سیگنال نوری والکتریکی به طور همزمان در سال های اخیر بسیار مورد توجه قرار گرفتهاست به این دلیل در این پروژه سعی شده است ابتدا روند پیدایش ترانزیستور لیزر بیان شد ساختار تکنولوژی ساخت و پارامترهای کاری از اعم از نوری والکتریکی برای یک ترازیستور لیزر یا طول های کاواک 150 و 400 مورد بررسی قرار می گیرد. سپس چگونگی توید نور در بیس ...

2015
Aiting Jiang Seungyong Jung Yifan Jiang Karun Vijayraghavan Jae Hyun Kim Mikhail A. Belkin

Articles you may be interested in InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm Room temperature single-mode terahertz sources based on intracavity difference-frequency generation in quantum cascade lasers Appl. Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections Appl. Surface-emitting tera...

Journal: :Optics letters 2014
J T Bovington M J R Heck J E Bowers

A III-V/Si₃N₄ platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry-Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III-V to Si₃N₄ are measured to be 2.5±0.75  dB.

2001
H.-H. Lin

A highly strained GaAs=GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mm pulsed operation with a low threshold current density of 300 A=cm. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the t...

Journal: :Optics letters 1993
N H Rizvi P M French J R Taylor P J Delfyett L T Florez

A Cr:LiSrAIF(6) laser has been mode locked by using a multiple-quantum-well (MQW) absorber. With the MQW absorber inside the laser cavity, Kerr lens mode locking is initiated, yielding transform-limited pulses as short as 93 fs. Pulses of 500-fs duration have also been produced by using resonant passive mode locking with the MQW absorber in an external cavity.

Journal: :Optics letters 1994
A E Kaplan P L Shkolnikov B A Akanaev

We found conditions for excitation of bright-bright 2pi solitons in stimulated Raman scattering that involves nutation of population at Raman quantum levels, for two (laser-Stokes) and three (e.g., laser-Stokes-anti-Stokes) components. The soliton components at all participating frequencies are bright solitons of the same, Lorentzian, shape, in contrast to the well-known bright-dark soliton com...

1999
J. O’Gorman A. F. J. Levi R. A. Logan

We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, /z = 1.3 ,um. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines lase...

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