نتایج جستجو برای: quantum well laser
تعداد نتایج: 1937385 فیلتر نتایج به سال:
We report a novel quantum dot based laser design where a stable high-Q master laser is used to injection lock a passively mode-locked monolithic colliding pulse slave laser. Coupling between the crossed orthogonal laser cavities is achieved through a common monolithically integrated saturable absorber, which results in the locking and hence reduction of the timing jitter as well as the long-ter...
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به دلیل نیاز تراشه ها به اتصالات نوری ترانزیستور لیزر با قابلیت ارسال سیگنال نوری والکتریکی به طور همزمان در سال های اخیر بسیار مورد توجه قرار گرفتهاست به این دلیل در این پروژه سعی شده است ابتدا روند پیدایش ترانزیستور لیزر بیان شد ساختار تکنولوژی ساخت و پارامترهای کاری از اعم از نوری والکتریکی برای یک ترازیستور لیزر یا طول های کاواک 150 و 400 مورد بررسی قرار می گیرد. سپس چگونگی توید نور در بیس ...
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A III-V/Si₃N₄ platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry-Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III-V to Si₃N₄ are measured to be 2.5±0.75 dB.
A highly strained GaAs=GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mm pulsed operation with a low threshold current density of 300 A=cm. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the t...
A Cr:LiSrAIF(6) laser has been mode locked by using a multiple-quantum-well (MQW) absorber. With the MQW absorber inside the laser cavity, Kerr lens mode locking is initiated, yielding transform-limited pulses as short as 93 fs. Pulses of 500-fs duration have also been produced by using resonant passive mode locking with the MQW absorber in an external cavity.
We found conditions for excitation of bright-bright 2pi solitons in stimulated Raman scattering that involves nutation of population at Raman quantum levels, for two (laser-Stokes) and three (e.g., laser-Stokes-anti-Stokes) components. The soliton components at all participating frequencies are bright solitons of the same, Lorentzian, shape, in contrast to the well-known bright-dark soliton com...
We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, /z = 1.3 ,um. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines lase...
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