An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysi...

Exact diagonalization calculations reveal that the energy spacing ∆ in the conduction band tunes the interplay between the local Kondo and non local RKKY interactions, giving rise to a “Doniach phase diagram” for a nanocluster with regions of prevailing Kondo or RKKY correlations. The parity of the total number of electrons alters the competition between the Kondo and RKKY correlations. This in...

We consider phase-coherent transport through ballistic and diffusive two-dimensional hole systems based on the Kohn-Luttinger Hamiltonian. We show that intrinsic heavy-hole-light-hole coupling gives rise to clear-cut signatures of an associated Berry phase in the weak localization which renders the magnetoconductance profile distinctly different from electron transport. Nonuniversal classical c...

We review our experimental study on the electron transport in quantum dots, formed in the two-dimensional electron gas in GaAs/AlGaAs heterostructures. Single electron transport with well-resolved zero-dimensional energy levels is described for both single and coupled quantum dots. Effects of microwave irradiation are also studied, and photon assisted tunneling was observed between two discrete...

We study the conductance through finite Aharonov-Bohm rings of interacting electrons weakly coupled to noninteracting leads at two arbitrary sites. This model can describe an array of quantum dots with a large charging energy compared to the interdot overlap. As a consequence of the spin-charge separation, which occurs in these highly correlated systems, the transmittance is shown to present pr...

A model that explains the unusual characteristics of the AlGaAs/GaAs modulation-doped field-effect transistor (MODFET) with InAs quantum dots incorporated in the GaAs channel is presented. It is shown that the negative charge of electrons confined in quantum dots decreases the threshold gate–drain voltage at which the channel is fully depleted. This provides an impact ionization of quantum dots...

A two-dimensional array of quantum dots in a magnetic field is considered. The electrons in the quantum dots are described as unitary random matrix ensembles. The strength of the magnetic field is such that there is half a flux quantum per plaquette. This model exhibits the Integer Quantum Hall Effect. For N electronic states per quantum dot the limit N → ∞ can be solved by a saddle point integ...

We report transport measurements as a function of bias in open semiconductor quantum dots. These measurements are well described by an effective electron temperature derived from Joule heating at the point contacts and cooling by Wiedemann-Franz out-diffusion of thermal electrons. Using this model, we propose and analyze a quantum dot based sensor which measures absolute magnetic field at micro...

we report the growth by ion exchange synthesis of zns nanoparticles in mcm-41 matrices using zn (ch3coo)2 and na2s starting sources. the final product (zns/mcm-41) was characterized by x-ray diffraction (xrd) pattern, transmission electron microscopy (tem), scanning electron microscopy (sem), infrared spectrometry (ir) and uv-vis spectroscopy. its crystalline structure and morphology was studie...