نتایج جستجو برای: psp soi

تعداد نتایج: 6784  

Journal: :International journal of clinical and experimental pathology 2015
Shaohui Zong Gaofeng Zeng Bin Zou Keke Li Ye Fang Li Lu Deqiang Xiao Zhiyong Zhang

Polygonatum sibiricum polysaccharide (PSP) is a traditional Chinese medicine and is widely used to treat many diseases for hundreds of years conventionally. This study was to access the effects of PSP on the osteogenic differentiation of bone marrow mesenchymal stem cells (BMSCs) in the mice. Cells collected from BALB/C mice in the bone marrow were isolated and cultured with osteogenic medium (...

2016
Yong Li Jinshui Wu Jianlin Shen Shoulong Liu Cong Wang Dan Chen Tieping Huang Jiabao Zhang

Maintaining good soil productivity in rice paddies is important for global food security. Numerous methods have been developed to evaluate paddy soil productivity (PSP), most based on soil physiochemical properties and relatively few on biological indices. Here, we used a long-term dataset from experiments on paddy fields at eight county sites and a short-term dataset from a single field experi...

2017
Fatma Nihan Turhan Caglar Nilgun Isiksacan Ismail Biyik Selcuk Opan Hulya Cebe Ibrahim Faruk Akturk

INTRODUCTION Acute myocardial infarction (AMI) could be considered to be a state of inflammation. Many inflammatory markers have been evaluated in the AMI setting so far. Presepsin (PSP) is a novel biomarker for diagnosis and prognosis of systemic inflammation that has not been studied in the AMI setting to date. In this study, we aimed to examine serum PSP levels in patients with acute ST elev...

1999
Sung Bae Park Young Wug Kim Young Gun Ko Kwang Il Kim Il Kwon Kim Hee-Sung Kang Jin Oh Yu Kwang Pyuk Suh

A 0.25m, four-layer-metal, 1.5-V, 600-MHz, fully depleted (FD) silicon-on-insulator (SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209-mm silicon die has been developed leveraging the existing bulk design. FD-SOI technology is used because it has better immunity for dynamic leakage current than partially depleted SOI in highspeed dynamic circuits without body ...

2008
Conal E. Murray S. M. Polvino I. C. Noyan B. Lai Z. Cai

Synchrotron-based X-ray microbeam measurements were performed on silicon-on-insulator (SOI) features strained by adjacent shallow-trench-isolation (STI). Strain engineering in microelectronic technology represents an important aspect of the enhancement in complementary metal-oxide semiconductor (CMOS) device performance. Because of the complexity of the composite geometry associated with microe...

1998
J. Cao D. Pavlidis Y. Park J. Singh A. Eisenbach

The use of compliant silicon-on-insulator ~SOI! substrates instead of Si substrates is shown to improve the quality of epitaxial GaN layers by releasing the strain and absorbing the generated threading dislocations in the thin Si overlay of the SOI substrate. GaN layers have been grown on SOI substrates by low-pressure metalorganic chemical vapor deposition and various growth conditions and com...

1999
GREGORY J. McCABE MICHAEL D. DETTINGER

Changing patterns of correlations between the historical average June–November Southern Oscillation Index (SOI) and October–March precipitation totals for 84 climate divisions in the western US indicate a large amount of variability in SOI/precipitation relations on decadal time scales. Correlations of western US precipitation with SOI and other indices of tropical El Niño–Southern Oscillation ...

Journal: :The Behavioral and brain sciences 2005
David P Schmitt

The Sociosexual Orientation Inventory (SOI; Simpson & Gangestad 1991) is a self-report measure of individual differences in human mating strategies. Low SOI scores signify that a person is sociosexually restricted, or follows a more monogamous mating strategy. High SOI scores indicate that an individual is unrestricted, or has a more promiscuous mating strategy. As part of the International Sex...

2016
Vita Pi-Ho Hu

Abstract The impacts of negative and positive bias temperature instabilities (NBTI and PBTI) on the stability of ultra-thin-body (UTB) GeOI 6T SRAM cell and performance of sense amplifier compared with the SOI counterparts are analyzed and discussed in this report. Worst case stress scenarios for read and write operations are analyzed. For UTB GeOI SRAMs, PBTI dominates the degradations in read...

2002
J. M. Park T. Grasser H. Kosina S. Selberherr

The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. ...

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