The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricat...

A well-known result by Stein (1956) shows that in particular situations, biased estimators can yield better parameter estimates than their generally preferred unbiased counterparts. This letter follows the same spirit, as we will stabilize the unbiased generalization error estimates by regularization and finally obtain more robust model selection criteria for learning. We trade a small bias aga...

A new SiC nanoparticles (SiC NPs)-based chemiluminescence (CL) probe for selective and sensitive detecting of ˙OH has been developed. The radiative recombination of ˙OH-injected holes and electrons in the SiC NPs accounts for the CL phenomenon. Furthermore, the as-developed CL probe has been successfully applied to detect ˙OH in PM2.5.

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...

The static characteristics of CREE 1200V/100A 4H-SiC MOSFET have been fully characterized at temperatures ranging from 0°C to 150°C. The distinct characteristics of high power SiC MOSFET compared with the silicon counterparts are analyzed and explained. A novel physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER software to expres...

Mitsubishi Electric has developed a 1.7 kV hybrid SiC power module consisting of 6th generation Si-IGBT and SiC Schottky Barrier Diode (SBD). Adopting SiC-SBD enables a significant power loss reduction during the diode turn-off and IGBT turn-on. And adopting of 6th generation IGBT enables the reduction of the IGBT turn-off loss. By using the newly developed chip set, high temperature enduring g...

We consider the existence in arbitrary finite dimensions d of a POVM comprised of d rank-one operators all of whose operator inner products are equal. Such a set is called a “symmetric, informationally complete” POVM (SIC-POVM) and is equivalent to a set of d equiangular lines in C . SIC-POVMs are relevant for quantum state tomography, quantum cryptography, and foundational issues in quantum me...

Could these biblical texts be interpreted as the historical evidence that Jesus of Nazareth died of heart rupture or ‘a broken heart’ causing pericardial tamponade (punctured by the soldier’s spear)? During the last decade, a strange syndrome of extensive reversible cardiac dysfunction precipitated by acute emotional or physical stress has been increasingly recognized. The syndrome has various ...